No abstract

As one of the many nano-device fabrication techniques employed in the semiconductor industry, neutral beams are being examined using various methods to solve possible charge-related problems that occur during device processing. This review introduces a neutral beam generated by surface neutralization of an ion beam using a low angle forward reflection technique and explains its application to various areas such as surface treatments and etching. The neutralization efficiency of an ion beam using a low angle forward reflection technique was approximately 99.7%. When a metal-oxide-semiconductor device was etched using a reactive neutral beam, it was confirmed that charge-related problems such as aspect-ratio-dependent etching and gate oxide charging could be removed using reactive neutral beam etching instead of conventional reactive ion etching. Neutral beams can be beneficial to other devices such as the III-V device and field emission device.

No abstract

In this study, the effects of N 2 flow rate in the He/O 2 /N 2 gas mixture on the characteristics of a pin-to-plate dielectric barrier discharge (DBD) having the size of 100 mm  1000 mm have been investigated for the application to flat panel display processing such as photoresist ashing. The pin-to-plate DBD showed about 70-120% higher photoresist ashing rate at the same applied voltage compared to the conventional DBD. The addition of 3 slm of N 2 to He(10 slm)/O 2 (3 slm) showed the highest photoresist ashing rate of about 580 nm/min for the pin-to-plate DBD at 12 kV of AC voltage. The increase of N 2 flow rate in He/O 2 gas mixture up to 3 slm appeared to increase the density of N 2 þ ions and N 2 metastables while the oxygen atomic density appeared to decrease continuously. The increase of photoresist ashing rate with the increase of N 2 flow rate up to 3 slm was related to the increase of the substrate surface temperature by the increased collision of N 2 þ ions and N 2 metastables with the substrate.

No abstract