This paper presents a light detection and ranging (LIDAR) system using electromagnetically actuated two-axis scanning micromirror. The distance measurement with the LIDAR is based on the indirect time-of-flight method using the relative ratio of the accumulated charges in capacitors connected to photodiode pixels, which is determined by the time difference between the transmitted and reflected light pulse. The micromirror has double gimbaled structure for two-axis actuation and circular reflection plate with the diameter of 3 mm. The horizontal scan angle of 49.13° was obtained by the resonant actuation at 28 kHz, and the vertical scan of 29.23° was achieved by the sinusoidal forced actuation at 60 Hz. The distance to multiple targets could be measured at once by laser scanning using the micromirror, and the distance profile LIDAR image was constructed by the measurement results.

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A millimeter-wave substrate-integrated waveguide (SIW) was firstly demonstrated using the micromachining of photoetchable glass (PEG) for 5G applications. A PEG substrate was used as a dielectric material of the SIW, and its photoetchable properties were used to fabricate through glass via (TGV) holes. Instead of the conventional metallic through glass via (TGV) array structures that are typically used for the SIW, two continuous empty TGV holes with metallized sidewalls connecting the top metal layer to the bottom ground plane were used as waveguide walls. The proposed TGV walls were fabricated by using optical exposure, heat development and anisotropic HF (hydrofluoric acid) etching of the PEG substrate, followed by a metal sputtering technique. The SIW was fed by microstrip lines connected to the waveguide through tapered microstrip-to-waveguide transitions. The top metal layer, including these feedlines and transitions, was fabricated by selective metal sputtering through a silicon shadow mask, which was prefabricated by a silicon deep-reactive ion-etching (DRIE) technique. The developed PEG-based process provides a relatively simple, wafer-level manufacturing method to fabricate the SIW in a low-cost glass dielectric substrate, without the formation of individual of TGV holes, complex time-consuming TGV filling processes and repeated photolithographic steps. The fabricated SIW had a dimension of 6 × 10 × 0.42 mm3 and showed an average insertion loss of 2.53 ± 0.55 dB in the Ka-band frequency range from 26.5 GHz to 40 GHz, with a return loss better than 13.86 dB. The proposed process could be used not only for SIW-based devices, but also for various millimeter-wave applications where a glass substrate with TGV structures is required.