Although pelvic irradiation is effective for the treatment of various cancer types, many patients who receive radiotherapy experience serious complications. Gut microbial dysbiosis was hypothesized to be related to the occurrence of radiation-induced complications in cancer patients. Given the lack of clinical or experimental data on the impact of radiation on gut microbiota, a prospective observational study of gut microbiota was performed in gynecological cancer patients receiving pelvic radiotherapy. In the current study, the overall composition and alteration of gut microbiota in cancer patients receiving radiation were investigated by 454 pyrosequencing. Gut microbial composition showed significant differences (P < 0.001) between cancer patients and healthy individuals. The numbers of species-level taxa were severely reduced after radiotherapy (P < 0.045), and the abundance of each community largely changed. In particular, the phyla Firmicutes and Fusobacterium were significantly decreased by 10% and increased by 3% after radiation therapy, respectively. In addition, overall gut microbial composition was gradually remolded after the full treatment course of pelvic radiotherapy. In this set of cancer patients, dysbiosis of the gut microbiota was linked to health status, and the gut microbiota was influenced by pelvic radiotherapy. Although further studies are needed to elucidate the relationship between dysbiosis and complications induced by pelvic radiotherapy, the current study may offer insights into the treatment of cancer patients suffering from complications after radiation therapy.
This study aimed to investigate the association between a virtual reality (VR) intervention program and cognitive, brain and physical functions in high-risk older adults. In a randomized controlled trial, we enrolled 68 individuals with mild cognitive impairment (MCI). The MCI diagnosis was based on medical evaluations through a clinical interview conducted by a dementia specialist. Cognitive assessments were performed by neuropsychologists according to standardized methods, including the Mini-Mental State Examination (MMSE) and frontal cognitive function: trail making test (TMT) A & B, and symbol digit substitute test (SDST). Resting state electroencephalogram (EEG) was measured in eyes open and eyes closed conditions for 5 minutes each, with a 19-channel wireless EEG device. The VR intervention program (3 times/week, 100 min each session) comprised four types of VR game-based content to improve the attention, memory and processing speed. Analysis of the subjects for group–time interactions revealed that the intervention group exhibited a significantly improved executive function and brain function at the resting state. Additionally, gait speed and mobility were also significantly improved between and after the follow-up. The VR-based training program improved cognitive and physical function in patients with MCI relative to controls. Encouraging patients to perform VR and game-based training may be beneficial to prevent cognitive decline.
Batch
growth of high-mobility (μFE > 10 cm2V–1s–1) molybdenum disulfide
(MoS2) films can be achieved by means of the chemical vapor
deposition (CVD) method at high temperatures (>500 °C) on
rigid
substrates. Although high-temperature growth guarantees film quality,
time- and cost-consuming transfer processes are required to fabricate
flexible devices. In contrast, low-temperature approaches (<250
°C) for direct growth on polymer substrates have thus far achieved
film growth with limited spatial homogeneity and electrical performance
(μFE is unreported). The growth of a high-mobility
MoS2 film directly on a polymer substrate remains challenging.
In this study, a novel low-temperature (250 °C) process to successfully
overcome this challenge by kinetics-controlled metal–organic
CVD (MOCVD) is proposed. Low-temperature MOCVD was achieved by maintaining
the flux of an alkali-metal catalyst constant during the process;
furthermore, MoS2 was directly synthesized on a polyimide
(PI) substrate. The as-grown film exhibits a 4 in. wafer-scale uniformity,
field-effect mobility of 10 cm2V–1s–1, and on/off ratio of 105, which are comparable
with those of high-temperature-grown MoS2. The directly
fabricated flexible MoS2 field-effect transistors demonstrate
excellent stability of electrical properties following a 1000 cycle
bending test with a 1 mm radius.
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