Atmospheric pressure plasma jet (APPJ) technology is a versatile technology that has been applied in many energy harvesting and storage devices. This feature article provides an overview of the advances in APPJ technology and its application to solar cells and batteries. The ultrafast APPJ sintering of nanoporous oxides and 3D reduced graphene oxide nanosheets with accompanying optical emission spectroscopy analyses are described in detail. The applications of these nanoporous materials to photoanodes and counter electrodes of dye-sensitized solar cells are described. An ultrashort treatment (1 min) on graphite felt electrodes of flow batteries also significantly improves the energy efficiency. OPEN ACCESSCoatings 2015, 5 27

Articles you may be interested inIn situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metalorganic vapor phase epitaxy J. Appl. Phys. 115, 094906 (2014); 10.1063/1.4867640 Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer J. Appl. Phys. 102, 053519 (2007); 10.1063/1.2776218 High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor depositionInGaN layers have been grown on ͑0001͒ ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray diffraction. Even at high indium concentrations no In droplets and phase separation appeared, possibly due to coherent growth of InGaN on ZnO. Photoluminescence showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. An activation energy of 59 meV for the InGaN epilayer is determined.

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Raman spectra of three bulk 4H-SiC wafers with different free carrier concentration were measured at temperature from 80 K to 873 K. As temperature increases, Raman peaks of most optical phonon modes show monotonous down shift. An anomalous non-monotonous variation with temperature, was observed in the A(1) longitudinal optical (LO) mode from doped samples. Two methods of theoretical fitting, one-mode (LO-plasma coupled (LOPC) mode) and two-mode (A(1)(LO) + LOPC) fitting, are employed to analyze this anomalous phenomenon. Theoretical simulations for temperature dependent Raman spectra by using two methods are critically examined. It turns out that one-mode method conforms well the experimental results, while two-mode method is untenable in physics. The non-monotonous variation of blue-red shifts with temperature for LOPC mode from doped 4H-SiC could be explained by the influence from ionization process of impurities on the process of Raman scattering. A quantitative description on temperature dependent Raman spectra for doped 4H-SiC is achieved, which matches well to experimental data.