In this study, we designed and fabricated a high-performance humidity sensor based on a donor-acceptor polymer transistor. To improve its sensing performance, a polymeric semiconductor film with macroporous structure was prepared using a facilitated phase-separation method. The relationship between the sensing performance and the pore size was systematically investigated by testing the humidity-sensing performance. The results suggested that the sensitivity of the sensor was improved with increasing pore size within a certain range. The sensor based on the macroporous film with an average pore size of 154 nm exhibited a sensitivity of 415 and a response time of 0.68 s, as the low relative humidity (RH) changed from 32% RH (9146 ppm) to 69% RH (20 036 ppm). These sensitivity values are better than those obtained by other reported humidity sensors based on organic field-effect transistors.

A facile and controllable phase‐separation route using semiconductor/insulating polymer blends for the fabrication of a microporous semiconductor film is proposed. The microporous film‐based gas sensor exhibits excellent selectivity toward ammonia with a detection limit of 0.5 ppm, a high sensitivity of over 800 at 10 ppm NH3, and a response/recovery time of only a few seconds.

A stripping procedure was demonstrated to prepare ultra-smooth gate dielectric for flexible and low-voltage organic phototransistors.

No abstract

No abstract