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The assembly of nanomaterials into suprastructures offers the possibility to fabricate larger scale functional materials, whose inner structure strongly influences their functionality for a vast range of applications. In spite...

The microfluidic device (MFD) with a glass–PDMS–glass (G-P-G) structure is of interest for a wide range of applications. However, G-P-G MFD fabrication with an ultra-thin PDMS film (especially thickness less than 200 μm) is still a big challenge because the ultra-thin PDMS film is easily deformed, curled, and damaged during demolding and transferring. This study aimed to report a thickness-controllable and low-cost fabrication process of the G-P-G MFD with an ultra-thin PDMS film based on a flexible mold peel-off process. A patterned photoresist layer was deposited on a polyethylene terephthalate (PET) film to fabricate a flexible mold that could be demolded softly to achieve a rigid structure of the glass–PDMS film. The thickness of ultra-thin patterned PDMS could reach less than 50 μm without damage to the PDMS film. The MFD showcased the excellent property of water evaporation inhibition (water loss < 10%) during PCR thermal cycling because of the ultra-thin PDMS film. Its low-cost fabrication process and excellent water evaporation inhibition present extremely high prospects for digital PCR application.

The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems and satellite systems. Over recent years, there has been an increasing requirement to develop wideband high-efficiency MMIC high power amplifiers (HPAs) to accommodate wideband operation and reduce power consumption. This paper presents a wideband high efficiency MMIC HPA for Sub-6-GHz applications using a 0.25-μm gate-length D-mode GaN/SiC high electron mobility transistor (HEMT) process. The amplifier consists of two stages with two HEMT cells for the driver stage and eight HEMT cells for the power stage. To obtain a flat gain while maintaining the wideband characteristic, a gain equalization technique is employed in the inter-stage matching circuit. Meanwhile, a low-loss output matching network is utilized to ensure high efficiency. The fabricated HPA occupies a compact chip area of 14.35 mm2 including testing pads. Over the frequency range of 2–6 GHz, measured results of this HPA show a saturated continuous wave (CW) output power of 44.4–45.2 dBm, a power added efficiency (PAE) of 35.8–51.3%, a small signal gain of 24–25.5 dB, and maximum input and output return losses of 14.5 and 10 dB, respectively.

With the further innovation of chip technology, semiconductor integrated circuits have made irreplaceable contributions to the development of microelectronic systems [...]