The authors report low-temperature preparation of Pb(Zr0.6,Ti0.4)O3 (PZT) thin films below 300°C using SrTiO3 seed layers on (111)Pt∕IrO2∕SiO2∕(001)Si substrates by metal-organic chemical vapor deposition. The critical parameters contributing low-temperature preparation for PZT were crystallinity and orientation of SrTiO3 seeds and deposition rate of PZT films. Using 1–2nm of SrTiO3 with (h00) and (hh0) mixed orientations, polycrystalline PZT films could be obtained at 290°C with deposition rate of 0.5–1.0nm∕min. The remanent polarization (2Pr) and coercive field (2Ec) of PZT films on SrTiO3 seeds with deposition rate of 0.5nm∕min were 42.4μC∕cm2 and 256kV∕cm, respectively.

Pb(Zr, Ti)O3 thin films were successfully prepared on (111)Pt/IrO2/SiO2/(100)Si substrates using SrTiO3 seeds at 290 oC by RF inductive heating type and 350 oC by resistive heating type metalorganic chemical vapor deposition method (MOCVD), respectively. The SrTiO3 was chosen as seed layers and prepared by pulsed laser deposition method. The crystal structures and orientations of SrTiO3 seeds were changed by deposition temperature. In the case of preparation with RF inductive heating MOCVD, the remanent polarization (2Pr) and coercive field (2Ec) were 42 μC/cm2 and 256 kV/cm, respectively.

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