Carbon-doped SiO2 low k thin films were prepared by radio frequency plasma-enhanced chemical vapor deposition at 400°C from polymerization of tetramethylsilane (4MS) and copolymerization of tetramethylsilane and silane false(SiH4false) precursor, with nitrous oxide as the oxidant gas. Copolymer thin films from 4MS and SiH4 precursor show much higher deposition rates than polymer thin films from 4MS, if all other parameters are kept the same. The addition of SiH4 can significantly promote the plasma polymerization of 4MS. The structure and composition of these films were characterized using Fourier transform infrared and X-ray photoelectron spectroscopy. The physical properties of the films have been investigated by dielectric constant, refractive index, and thermal stability measurements. The two kinds of films have similar chemical composition and structure. The film as prepared shows excellent thermal stability at temperatures as high as 400°C and a dielectric constant of about 3, which indicates that it has potential as a low k dielectric for advanced interconnect applications. © 2001 The Electrochemical Society. All rights reserved.

Recent years have witnessed rapid developments in organic-inorganic hybrid perovskites, among which 2D Ruddlesden-Popper (RP) perovskites stand out due to their outstanding ambient stability. In photodetector applications, 2D RP perovskites are mostly limited to lateral device configuration because of their preferred in-plane charge transportation within quantum well structures. In this work, the low-temperature solution construction of 2D RP perovskite-based photodiodes in vertical device architecture is demonstrated. The paradigm phenylethylamine (PEA) spacer cation-based 2D perovskites are fabricated and optimized by exploiting a combination of a NH Cl additive and dimethyl sulfoxide solvent (DMSO) solvent. They show increased crystallinity, extended photoluminescence lifetimes, and importantly a generation of 3D phases embedded within 2D perovskites, which efficiently promotes charge transfer. As a result, the photodetectors exhibit a high on/off ratio up to 2 × 10 , a large photocurrent of 0.34 mA cm , and rapid rise (5.8 ms) and decay time (4.6 ms). Of critical importance is the outstanding film/device stabilities demonstrated by storage in air (at 25 °C with 60% relative humidity) for 15 days as well as under UV illumination for 1.5 h and after 1500 bending cycles on flexible substrate.

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A new interconnect parasitic extraction flow considering geometry-related variation has been proposed in this letter. The 42 interconnect capacitance loads were fabricated by 55-nm process technology and measured to characterize geometric variation. According to the new extraction flow, interconnect technology file (ITF) has been optimized and established. As a result, both extracted error by layout parasitic extraction tool and simulated error by field solver have been improved obviously with this optimized ITF. Meanwhile, an on-chip interconnect test technique with nonoverlapping signal generation circuitry based on charge-induced-injection error-free charge-based capacitance measurement has been designed in this letter to simplify the test procedure.Index Terms-Geometric-related variation, interconnect parasitic extraction, charge-induced-injection error-free charge-based capacitance measurement (CIEF CBCM), non-overlapping signal generation circuitry.