We report here a GaN-based resonant cavity light-emitting diode (RCLED) with top and bottom dielectric TiO 2 /SiO 2 distributed Bragg reflector (DBR) mirrors on a silicon substrate. High data transmission in free space at 200 Mbps with an opening in the eye diagram was achieved. The results show that the combination of GaN-based LED on silicon and double sided dielectric DBR mirror deposition enables a manufacturable process which provides a unique opportunity for commercialization of RCLED in future solid-state lighting and visible light communication applications.

A vertical-structure quantum well (QW) diode based monolithic multicomponent system is for the first time implemented by integrating a light-emitting diode (LED), waveguide, and photodiode (PD) on a metal-bonded III-nitride-on-silicon platform. Two identical QW-diodes that are manufactured using all existing standard fabrication processes function as the LED and PD respectively, and waveguides are formed to establish on-chip optical link between the LED and PD. The PD absorbs the light from the adjacent LED coupled through the waveguide to induce a photocurrent that is proportional to the injection current of the LED, leading to an onchip power monitoring system. One PD can monitor multiple LEDs simultaneously by identifying individual differences of the system from the superimposed signals using signal extraction approach.

A monolithic photonic chip with multifunctional light emission/detection and electro-optic modulation capabilities in the near-infrared range is proposed and realized on an InP-based wafer. Two identical AlInGaAs multiple quantum well (MQW) diodes operating independently as light emission/detection devices are fabricated using a two-step etching process on a single wafer and connected via a straight waveguide. The photocurrent induced in the MQW diode for the detection process is generated by the infrared light emitted by the MQW diode during the emission process and transmitted via the straight waveguide. The MQW diode has an electro-optic modulation characteristic, and its spectral responsivity exhibits a blueshift with an increasingly negative bias voltage under external infrared laser excitation. An on-chip communication test is conducted to study the potential applications of the proposed monolithic photonic chip for transmission of optical signals in the near-infrared range.

An ultrathin vertical-structure light-emitting diode (LED) that inhibits confined optical modes is thought to be an ideal architecture for light extraction in which all emissions will couple to extraction modes. Here, we reduce the vertical-structure LED thickness down to ∼225 nm by combining metal-based bonded III-nitride-on-silicon and inductively coupled plasma reactive ion etching without a hard mask. The experimental results confirm that optical waveguide modes confining light are inhibited and all emissions would couple to extraction modes naturally. Moreover, the bottom Ag electrode functions as a reflector to effectively enhance light extraction.

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