GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

Cai, Wei; Yuan, Jialei; Ni, Shuyu; Shi, Zheng; Zhou, Weidong; Liu, Yuhuai; Wang, Yongjin; Amano, Hiroshi

doi:10.7567/1882-0786/ab023c

Cited by 15 publications

(12 citation statements)

References 31 publications

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“…In the flip-chip and substrate removal process, a dielectric DBR is firstly deposited on the as-grown surface side (or p-type side), followed by wafer bonding to a handling wafer. Substrate removal can be accomplished by laser-induced liftoff (LLO) [20], photoelectrochemical (PEC) etching of a sacrificial layer [84], wet/dry etching [85], or chemo-mechanical polishing (CMP) [86]. LLO was developed in 1999 [87] to separate GaN LEDs from a sapphire substrate with the back-side irradiation of an excimer laser.…”

Section: Dielectric Dbrs Through Substrate Removalmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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Section: Dielectric Dbrs Through Substrate Removalmentioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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“…However, due to their inherent narrow energy gap, the applicable wavelength of the devices is significantly limited. Compared to AlInGaP material, light emitted by InGaN/GaN semiconductors can cover the entire visible light range [12][13][14][15][16][17] [18], Thus, blue, green, and red can be integrated into one chip with the same material system. In 2008, utilizing a selective area growth method, a white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN/GaN multiple quantum wells (MQWs).…”

Section: Indexmentioning

confidence: 99%

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Mei

Iida

et al. 2022

J. Lightwave Technol.

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InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.

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“…[ 33 ] Professor Bao‐Ping Zhang group from Xiamen University fabricated vertical‐structured Fabry–Perot cavity on Si substrate by metal bonding technique; [ 34 ] Yongjin Wang group from Nanjing university of Posts and Telecommunications and Professor Amano from Japan Nagoya University Hiroshi deposit TiO 2 /SiO 2 DBR on top and bottom for RC micro‐LEDs. [ 35 ]…”

Section: Approaches For Improving Led Modulation Bandwidthmentioning

confidence: 99%

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Wan

Wang

Huang

et al. 2021

Advanced Photonics Research

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Visible light communication (VLC) has attracted widespread attention for wireless communications. The popularity of GaN-based light-emitting diodes (LEDs) has also laid a solid foundation for the application of VLC. As the light source of VLC, LED's modulation bandwidth directly determines the speed of communication. Herein, reviewing progress on modulation bandwidth improvement schemes of GaN LEDs transmitter is reviewed, covering aspects from epitaxial to devices. Epitaxial approaches include c-polar facet epitaxial optimization, non/semipolar facet epitaxial growth, and chip scheme such as micro-LEDs, nano-LEDs, resonant cavity-LEDs (RC-LEDs), plasmon, and metacavity LEDs. In terms of white LEDs, approaches to tackle the slow Stokes transfer and long carrier life for conventional phosphors including new color-conversion materials (CCMs) and new energy transfer routes are reviewed. This review promotes the development of GaN-based LEDs as the transmitter for high-speed VLC.

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GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors

Cited by 15 publications

References 31 publications

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

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