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The positive bias temperature instability (PBTI) characteristics of the n-channel metal-oxide-semiconductor field emission transistors which had different kinds of high-k dielectric gate oxides were studied with the different stress-relaxation times. The degradation in the threshold voltage followed a power-law on the stress times. In particular, we found that their PBTI behaviors were closely related to the structural phase of the high-k dielectric gate oxide. In an amorphous gate oxide, the negative charges were trapped into the stress-induced defects of which energy level was so deep that the trapped charges were de-trapped slowly. Meanwhile, in a crystalline gate oxide, the negative charges were trapped mostly in the pre-existing defects in the crystallized films during early stage of the stress time and de-trapped quickly due to the shallow energy level of the defects.

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Plasma doping and laser annealing are successfully integrated into the conventional p-MOSFET process to form an ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth (X J) and sheet resistance (R S) are reduced. Also, significant improvement of the short channel effect without the degradation of on-current is observed.