The ion‐induced secondary‐electron‐emission yield of MgO films by the ion gun method was successfully measured. Variations due to crystal orientation and ion kinetic energy were observed. Ejected electron energy showed correlation with the ionization energy of the gas.

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This paper focuses on the secondary electron emission coefficient (γ) and the degradation dynamics of the MgO protecting layer. It is demonstrated that the γ could be improved by 50 % at the maximum using an ion implantation technique. We discuss that the γ improvement is not based on the same principle as reported in the thermally equilibrium compound. As for the degradation dynamic, we point out that the desorption of MgO clusters from the MgO surface is enhanced in the surface normal direction by applying a bias voltage to the substrate. From a computer simulation, it is confirmed for the first time that the desorption of MgO constituent, in other words, the surface degradation, is certainly occurring under the electric field condition.