We present a method to calculate the quantum-mechanical bandstructure of semiconductor heterostructures for open boundary conditions using k∙p theory. The method is efficient, numerically stable, and easy to implement. The open boundary conditions are derived from a perfectly matched layer (PML) formalism resulting in a complex coordinate stretching. Compared with previous methods like the transfer-matrix method and the quantum transmitting boundary method, the PML formalism reduces the computational costs several orders of magnitude without noticeable reduction of accuracy.
This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a many-body calculation of optical gain for the quantum-well region is integrated into a multi-dimensional electroopto-thermal simulator. Simulation results of material gain and DC device data of a commercial 850 nm Vertical Cavity Surface Emitting Lasers (VCSEL) are compared to measurements. They illustrate the validity of the approach.
Harmonic balance analysis for semiconductor lasers under large-signal modulations t e f a n o d e r m a t t 1, * , b e r n d w i t z i g m a n n 1 and b e r n h a r d s c h m i t hü s e n 2 Abstract. The dynamic characteristics of an edge-emitting laser under large-signal modulation are analyzed in the frequency domain using a harmonic balance method on device level. The simulations reveal the nonlinearities of the carrier dynamics in the quantum well region which strongly influence the optical power in the higher harmonics.
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