We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (μFE) of 15.1 cm2/V s, subthreshold slope of 0.25 V/dec, threshold voltage (VTH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 μm thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation.

The world largest flexible full color 6.5-inch active matrix organic light emitting diode (AMOLED) display with top emission mode on plastic film is demonstrated. The active matrix backplanes were fabricated using metal oxide thin film transistors (TFTs). The n-channel metal oxide TFTs on plastic film exhibited field-effect mobility of 17.8 cm 2 /Vs, threshold voltage of 0.4 V, on/off ratio of 1.1x 10 8 , and subthreshold slope of 0.34 V/dec. These TFT performance characteristics made it possible to integrate scan driver circuit, demux switching and compensation circuit on the panel. Bending tests were performed with TFT backplane samples to determine critical curvature radius to which the panel can be bent without TFT performance degradation. The results were compared with the calculations that took into account thicknesses and mechanical constants of flexible substrate and of thin-film layers in AMOLED device.

This paper reports a low-temperature polycrystalline silicon (LTPS) fabrication process on plastic substrate for a flexible AMOLED display. Characteristics of fabricated TFTs showed excellent performance with field effect mobility of 124.1 cm 2 /Vs, on/off ratio of >10 8 , subthreshold slope of 0.30V/dec, and threshold voltage of -2.03V. Internal scan drive circuits, 1:3 demux, and compensation circuits were successfully integrated on the backplane of a 166ppi 2.8" WQVGA flexible AMOLED panel.

This study reported a low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) fabrication process on plastic substrates for flexible display applications. Polycrystalline silicon (poly-Si) films were formed by excimer laser annealing (ELA) method. It was found by ELA thermal simulation that there was around 70 on plastic surface during ELA crystallization process. The excimer laser irradiated film was analyzed by using various spectroscopic methods such as X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Dehydrogenation and activation processes were performed by a conventional LTPS method without causing any plastic substrate distortion. The fabricated poly-Si TFT on a flexible backplane shows a very good performance with field effect mobility of 95.3 cm 2 /Vs, on/off ratio current ratio > 10 8 , and threshold voltage of -1.6 V. Bending tests after a delamination process were also performed with TFT backplane samples. AMOLED panel Bending machineSID 11 DIGEST • 197 16.2 / M. Kim

Materials and Components for Flexible AMOLED Display were reviewed in this paper. Plastic substrates need high thermal resistance and low coefficient of thermal expansion, which would be compatible with mass production line. Flexible modules such as chip on flexible substrate, slim polarizer, and touch screen panel are also important to realize flexible AMOLED display.