Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

Park, Jin‐Seong; Kim, Tae‐Woong; Stryakhilev, Denis; Lee, Jaesup; An, Sungguk; Pyo, Yong-Shin; Lee, Dong-Bum; Mo, Yeon Gon; Jin, Dong-Un; Chung, Ho Kyoon

doi:10.1063/1.3159832

Cited by 431 publications

(219 citation statements)

References 15 publications

Supporting

Mentioning

216

Contrasting

Unclassified

Order By: Relevance

“…Flexible interface towards Bio-tissue [3] Flexible computing IO and flexible ADC [6,7] Sensors and flexible display [1,2,5] Flexible energy supply system [4] image pre-processing and AIP architecture for image classification are presented in Section 3. The circuit design to solve the problems of flexible computing is shown in Section 4.…”

Section: Flexible Thin Membranementioning

confidence: 99%

“…For example, the flexible electronic devices have put the curved screen [2] and the electronic skin [3] into practice. Meanwhile, state of the art has done a lot of proven researches in the flexible self-energizing (solar, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…As shown in Figure 1, the innovative fully flexible system architecture, where the works on various types of flexible interfaces toward bio-tissue [3], flexible analog-to-digital converter (ADC) [6], memory [7], sensors, and display [1,2] have been reported, however, the computation based on flexible devices is still an unsolved problem for the fully flexible system, especially for the complex algorithms with real-time processing requirements. The lower carrier mobility of the devices themselves and device deviation that is caused by immature manufactory make it impossible to implement the high-frequency and high-resolution digital processing system on flexible technology.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Could We Realize the Fully Flexible System by Real-Time Computing with Thin-Film Transistors?

Liu

Qiao

et al. 2017

Applied Sciences

View full text Add to dashboard Cite

Flexible electronic devices, such as the typical thin-film transistors, are widely adopted in the area of sensors, displayers, wearable equipment, and such large-area applications, for their features of bending and stretching; additionally, in some applications of lower-resolution data converters recently, where a trend appears that implementing more parts of system with flexible devices to realize the fully flexible system. Nevertheless, relatively fewer works on the computation parts with flexible electronic devices are reported, due to their poor carrier mobility, which blocks the way to realize the fully flexible systems with uniform manufacturing process. In this paper, a novel circuit architecture for image processing accelerator using Oxide Thin-film transistor (TFT), which could realize real-time image pre-processing and classification in the analog domain, is proposed, where the performance and fault-tolerance of image signal processing is exploited. All of the computation is done in the analog signal domain and no clock signal is needed. Therefore, certain weaknesses of flexible electronic devices, such as low carrier mobility, could be remedied dramatically. In this paper, Simulations based on Oxide TFT device model have demonstrated that the flexible computing parts could perform 5 × 5 Gaussian convolution operation at a speed of 3.3 MOPS/s with the energy efficiency of 1.83 TOPS/J, and realize image classification at a speed of 10 k fps, with the energy efficiency of 5.25 GOPS/J, which means that the potential applications to realize real-time computing parts of complex algorithms with flexible electronic devices, as well as the future fully flexible systems containing sensors, data converters, energy suppliers, and real-time signal processing modules, all with flexible devices.

show abstract

Section: Flexible Thin Membranementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Could We Realize the Fully Flexible System by Real-Time Computing with Thin-Film Transistors?

Liu

Qiao

et al. 2017

Applied Sciences

View full text Add to dashboard Cite

show abstract

“…Devices made from these materials can only be operated at very low speed (<<1 GHz) because of the inferior carrier properties of these materials. Regardless of the low speed, these flexible electronics are suitable for applications in products such as flexible displays [1], electronic tags [2], etc. In these applications, the mechanical flexibility of electronics is of critical importance.…”

Section: Introductionmentioning

confidence: 99%

Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

Seo

Yuan

Sun

et al. 2011

Journal of Information Display

View full text Add to dashboard Cite

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency (f T /f max ) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies (f res ) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.Keywords: flexible electronics; nanomembrane; radio frequency thin-film transistors; RF switches; inductors and capacitors IntroductionTraditionally, flexible electronics are mostly based on organic or low temperature deposition compatible amorphous semiconductor (Si) materials. Devices made from these materials can only be operated at very low speed (<<1 GHz) because of the inferior carrier properties of these materials. Regardless of the low speed, these flexible electronics are suitable for applications in products such as flexible displays [1], electronic tags [2], etc. In these applications, the mechanical flexibility of electronics is of critical importance. On the other hand, a number of other applications do require the use of extremely highspeed devices (>1 GHz, the radio frequency (RF) speed), such as Wi-Fi devices, wearable radios, RF identification devices, foldable phased-array antennas, large-area radars for remote sensing, surveillance [3], etc. Nonetheless, current high-speed devices have been predominantly made of rigid chips and none of the traditional flexible active semiconductors can satisfy the requirements of high-speed applications.A promising solution toward high-speed flexible electronics has emerged with the recent development of transferrable single-crystal Si nanomembranes (SiNMs) [4][5][6][7]. By releasing high-quality flexible materials from silicon-on-insulator (SOI) and other types of substrates and transferring them to a new host substrate, high carrier mobility comparable with that of the bulk counterpart has been demonstrated [5].

show abstract

“…Recently, many types of interesting approaches have been actively researched and developed. Flexible displays (Gelinck & Leeuw, 2004;Park J. S. et al, 2009), radio-frequency flexible identification tags (Forrest, 2004;Jung M. et al, 2010), flexible and stretchable sensor arrays (Lin K. & Jain, 2009;Someya et al, 2005), flexible electronic circuit systems (Graz & Lacour, 2009;Zschieschang et al, 2010), stretchable lightings (Sekitani et al, 2009a), printable devices (Ishida et al, 2010), and sheet-type communication and power-transmission system (Sekitani et al, 2009b) are the feasible examples. In order to develop the practical systems using these devices, an embeddable nonvolatile memory is strongly required as one of the core devices.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Copolymer-Based Plastic Memory Transistors

Yoon¹,

Yang²,

Jung³

et al. 2011

Ferroelectrics - Applications

View full text Add to dashboard Cite

Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

Cited by 431 publications

References 15 publications

Could We Realize the Fully Flexible System by Real-Time Computing with Thin-Film Transistors?

Could We Realize the Fully Flexible System by Real-Time Computing with Thin-Film Transistors?

Transferrable single-crystal silicon nanomembranes and their application to flexible microwave systems

Ferroelectric Copolymer-Based Plastic Memory Transistors

Contact Info

Product

Resources

About