The recent development and spread of extensively drug-resistant and totally drug-resistant resistant (TDR) strains of Mycobacterium tuberculosis highlight the need for new antitubercular drugs. Protein synthesis inhibitors have played an important role in the treatment of tuberculosis (TB) starting with the inclusion of streptomycin in the first combination therapies. Although parenteral aminoglycosides are a key component of therapy for multidrug-resistant TB, the oxazolidinone linezolid is the only orally available protein synthesis inhibitor that is effective against TB. Here, we show that small-molecule inhibitors of aminoacyl-tRNA synthetases (AARSs), which are known to be excellent antibacterial protein synthesis targets, are orally bioavailable and effective against M. tuberculosis in TB mouse infection models. We applied the oxaborole tRNA-trapping (OBORT) mechanism, which was first developed to target fungal cytoplasmic leucyl-tRNA synthetase (LeuRS), to M. tuberculosis LeuRS. X-ray crystallography was used to guide the design of LeuRS inhibitors that have good biochemical potency and excellent whole-cell activity against M. tuberculosis. Importantly, their good oral bioavailability translates into in vivo efficacy in both the acute and chronic mouse models of TB with potency comparable to that of the frontline drug isoniazid.

This paper reports negative photoconductivity mechanism in flexible black phosphorus (BP) transistors built on freestanding polyimide film. Near-infrared laser (λ = 830 nm) excitation leads to significantly suppressed device on-state current with a very high responsivity of up to 53 A/W. The underlying mechanism of the negative photoconductivity is attributed to the strong photothermal effect induced by the low thermal conductivity of the polyimide substrate used. The heat generated by the infrared light illumination results in enhanced phonon scattering, reduced carrier mobility, and consequently negative photocurrent. Such a phenomenon was not observed in similar BP devices built on SiO/Si substrates whose thermal conductivity is much higher. The above photothermal mechanism is also supported by temperature-dependent electrical characterization and device simulation. Such a flexible BP infrared photodetector with ultrahigh responsivity may find potential applications in future wearable and biointegrated imaging systems.

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

This paper reports intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits directly printed on elastomeric polydimethylsiloxane (PDMS) substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO) nanoparticles. The BaTiO/PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. This work may offer an entry into more sophisticated stretchable electronic systems with monolithically integrated sensors, actuators, and displays, fabricated by scalable and low-cost methods for real life applications.

This paper describes a strategy to impart brittle conductive patterns composed of silver nanoparticles with high stretchability and structure‐dependent electrical characteristics. Silver nanoinks are printed on an elastomeric polyurethane acrylate substrate in the form of planar serpentine structures that can effectively mitigate strain concentration. The relative changes in resistance (∆R/R 0) and stretchability are found to strongly depend on the serpentine radius (r) that determines the strain relieving efficiency. Features with small radius of curvature show colossal ∆R/R 0 and hold great promise as ultrasensitive stretchable strain gauges. A record high gauge factor of 107 is achieved at 12% strain with r = 200 µm. Devices with larger radius of curvature exhibit higher stretchability and much more stable conductance, thus can be used as stretchable conductors. The results demonstrate the versatile functionalities that can be acquired from conventional materials by judicious structural designs.