Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

doi:10.1021/acsnano.5b04036

Cited by 144 publications

(109 citation statements)

References 53 publications

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“…These conductivities are just above the results of MoO 2 nanorods, and much higher than the conductivities of other 2D compounds such as transition metal dichalcogenides, black phosphorus, and SnO. 2,[34][35][36][37] The exceptionally high conductivity of individual MoO 2 nanosheet is ascribed to the unique crystal structure. To the best of our knowledge, the m-MoO 2 crystal has a rutile-type structure, which is built up by MoO 6 octahedral units (see inset of Fig.…”

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confidence: 84%

“…Our In recent years, 2D materials have aroused great interest as potential building blocks for a variety of fundamental optoelectronic components. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] To date, various 2D materials have been synthesized, including well-known graphene, 15 transition metal dichalcogenides, 16 antimonene, 17 black phosphorus, 18 Mo 2 C, 19 BN, 20 and so on, but some of which face very challenging in various optical and electronic applications due to zero-bandgap, low conductivity, or severe instability in air. In order to address this problem, it is urgent to develop a new material with a good stability and high conductivity.…”

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confidence: 99%

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Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Liu

Ren

et al. 2017

AIP Advances

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Exploration and development of new two-dimensional (2D) materials with good stability and remarkable physical properties have become the research hotspots. We report for the first time the monodispersity of ultrathin MoO2 nanosheets have been synthesized through an improved chemical vapor deposition (CVD) method using only molybdenum trioxide as precursor. The grown MoO2 nanosheets have an average thickness of ∼ 5 to 10 nm and exhibit good crystal-quality. Temperature-dependent Raman spectra show that the ultrathin MoO2 nanosheets have high thermal stability up to 503 K. In addition, the first order temperature coefficients of the MoO2 characteristic Raman modes O1–Mo and O2–Mo were firstly found to be -1.91×10-2 and -3.94×10-2 cm−1/K, respectively. Two-probe electrical measurements show that the as-fabricated ultrathin MoO2 nanosheets devices preserve a high electrical conductivity in ambient conditions, reaching up to 200 - 475 S/cm. The exceptionally high conductivity of individual MoO2 nanosheet is ascribed to the unique crystal structure. Our results demonstrate that the ultrathin MoO2 nanosheets show great potential applications in constructing new integrated electronic devices and systems.

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confidence: 84%

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confidence: 99%

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Liu

Ren

et al. 2017

AIP Advances

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“…Black phosphorous (BP) has attracted significant attention due to its remarkable electrical, optical, and optoelectronic properties including tunable direct band gap1, 2, 3 and high carrier mobility 4, 5, 6. Specifically, the sp 3 nonequivalent hybridization between adjacent P atoms results in the puckered structure, leading to in‐plane anisotropic characters such as anisotropic mechanical, electrical, and optical properties 7, 8, 9.…”

Section: Introductionmentioning

confidence: 99%

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

et al. 2018

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Abstract2D GeSe possesses black phosphorous‐analog‐layered structure and shows excellent environmental stability, as well as highly anisotropic in‐plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe‐based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe‐based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W−1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001] (armchair direction) and [010] (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle‐dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe‐based phototransistor shows strong polarization‐dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.

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“…and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Ultrashort Channel Length Black Phosphorus Field-Effect Transistors

Cited by 144 publications

References 53 publications

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Ultrathin MoO2 nanosheets with good thermal stability and high conductivity

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

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