Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Abstract

As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

Emerging in‐plane anisotropic two‐dimensional materials

“…Although many works have reported the device applications of FETs and photodetectors based on these low‐symmetrical 2D materials, they do not stress the in‐plane anisotropic properties. In fact, the recent progress of electronic and optoelectronic applications based on 2D materials have been well reviewed . Here, we only review the device applications based on the utilization of intrinsic in‐plane anisotropic properties of this category of 2D materials.…”

“…In fact, the recent progress of electronic and optoelectronic applications based on 2D materials have been well reviewed. [134][135][136] Here, we only review the device applications based on the utilization of intrinsic in-plane anisotropic properties of this category of 2D materials.…”

2D Metal Chalcogenides for IR Photodetection

“…Besides, NIR Schottky photodetectors based GeSe nanosheets have exhibited a marked photoresponse with a good responsivity of ≈3.5 A W −1 and a competitive photoconductive gain 5.3 . SnS shares similar crystal structure with GeSe and exhibits an indirect bandgap of 1.0–1.1 eV . Due to the anisotropic absorption, the SnS‐based NIR photodetector has showed that the photoresponse of zigzag direction is much greater than those of armchair direction .…”

Large-size and high performance visible-light photodetectors based on two-dimensional hybrid materials SnS/RGO

“…It is clear that the key parameters of our device are much higher than that of SnS lm based large-size photodetectors, [12][13][14][15][16][17] and are also close to that of single SnS nanoribbon/nanosheet based complex micron-size photodetectors. 11,[18][19][20][21][22] The enhanced photoresponse may be attributed to several reasons. The good ohmic contacts should contribute to a rapid diffusion of the charge carriers, and therefore, accelerate the transportation of carriers and increase the response speed.…”