Resonant-phonon terahertz quantum-cascade lasers operating up to a heat-sink temperature of 186 K are demonstrated. This record temperature performance is achieved based on a diagonal design, with the objective to increase the upper-state lifetime and therefore the gain at elevated temperatures. The increased diagonality also lowers the operating current densities by limiting the flow of parasitic leakage current. Quantitatively, the diagonality is characterized by a radiative oscillator strength that is smaller by a factor of two from the least of any previously published designs. At the lasing frequency of 3.9 THz, 63 mW of peak optical power was measured at 5 K, and approximately 5 mW could still be detected at 180 K.

We report the development of a quantum cascade laser, at ϭ87.2 m, corresponding to 3.44 THz or 14.2 meV photon energy. The GaAs/Al 0.15 Ga 0.85 As laser structure utilizes longitudinal-optical ͑LO͒ phonon scattering for electron depopulation. Laser action is obtained in pulsed mode at temperatures up to 65 K, and at 50% duty cycle up to 29 K. Operating at 5 K in pulsed mode, the threshold current density is 840 A/cm 2 , and the peak power is approximately 2.5 mW. Based on the relatively high operating temperatures and duty cycles, we propose that direct LO-phonon-based depopulation is a robust method for achieving quantum cascade lasers at long-wavelength THz frequencies.

We combine photonic crystal and quantum cascade band engineering to create an in-plane laser at terahertz frequency. We demonstrate that such photonic crystal lasers strongly improve the performances of terahertz quantum cascade material in terms of threshold current, waveguide losses, emission mode selection, tunability and maximum operation temperature. The laser operates in a slow-light regime between the M saddle point and K band-edge in reciprocal lattice. Coarse frequency control of half of a terahertz is achieved by lithographically tuning the photonic crystal period. Thanks to field assisted gain shift and cavity pulling, the single mode emission is continuously tuned over 30 GHz.

We report lasing at ∼3.0 THz (λ≈98–102 μm) in a quantum-cascade structure in which mode confinement is provided by a double-sided metal waveguide. The depopulation mechanism is based on resonant phonon scattering, as in our previous work. Lasing takes place in pulsed mode up to a heat-sink temperature of 77 K. The waveguide consists of metallic films placed above and below the 10-μm-thick multiple-quantum-well gain region, which gives low losses and a modal confinement factor of nearly unity. Fabrication takes place via low-temperature metallic wafer bonding and subsequent substrate removal using selective etching. This type of waveguide is expected to be increasingly advantageous at even longer wavelengths.

No abstract