The development of the terahertz frequency range (1-10 THz, λ ≈ 30-300 µm) has long been impeded by the relative dearth of compact, coherent radiation sources of reasonable power. This thesis details the development of quantum cascade lasers (QCLs) that operate in the terahertz with photon energies below the semiconductor Reststrahlen band. Photons are emitted via electronic intersubband transitions that take place entirely within the conduction band, where the wavelength is chosen by engineering the well and barrier widths in multiple-quantum-well heterostructures. Fabrication of such long wavelength lasers has traditionally been challenging, since it is difficult to obtain a population inversion between such closely spaced energy levels (hω ≈ 4-40 meV), and because traditional dielectric waveguides become extremely lossy due to free carrier absorption.This thesis reports the development of terahertz QCLs in which the lower radiative state is depopulated via resonant longitudinal-optical phonon scattering. This mechanism is efficient and temperature insensitive, and provides protection from thermal backfilling due to the large energy separation (∼36 meV) between the lower radiative state and the injector. Both properties are important in allowing higher temperature operation at longer wavelengths. Lasers using a surface plasmon based waveguide grown on a semi-insulating (SI) GaAs substrate were demonstrated at 3.4 THz (λ ≈ 88 µm) in pulsed mode up to 87 K, with peak collected powers of 14 mW at 5 K, and 4 mW at 77 K.Additionally, the first terahertz QCLs have been demonstrated that use metalmetal waveguides, where the mode is confined between metal layers placed immediately above and below the active region. These devices have confinement factors close to unity, and are expected to be advantageous over SI-surface-plasmon waveguides, especially at long wavelengths. Such a waveguide was used to obtain lasing at 3.8 THz (λ ≈ 79 µm) in pulsed mode up to a record high temperature of 137 K, whereas similar devices fabricated in SI-surface-plasmon waveguides had lower maximum lasing temperatures (∼92 K) due to the higher losses and lower confinement factors.This thesis describes the theory, design, fabrication, and testing of terahertz quantum cascade laser devices. A summary of theory relevant to design is presented, 3 including intersubband radiative transitions and gain, intersubband scattering, and coherent resonant tunneling transport using a tight-binding density matrix model. Analysis of the effects of the complex heterostructure phonon spectra on terahertz QCL design are considered. Calculations of the properties of various terahertz waveguides are presented and compared with experimental results. Various fabrication methods have been developed, including a robust metallic wafer bonding technique used to fabricate metal-metal waveguides. A wide variety of quantum cascade structures, both lasing and non-lasing, have been experimentally characterized, which yield valuable information about the transport ...

We review the most recent technological and application advances of quantum cascade lasers, underlining the present milestones and future directions from the Mid-infrared to the Terahertz spectral range. Challenges and developments, which are the subject of the contributions to this focus issue, are also introduced.

We report the development of a quantum cascade laser, at ϭ87.2 m, corresponding to 3.44 THz or 14.2 meV photon energy. The GaAs/Al 0.15 Ga 0.85 As laser structure utilizes longitudinal-optical ͑LO͒ phonon scattering for electron depopulation. Laser action is obtained in pulsed mode at temperatures up to 65 K, and at 50% duty cycle up to 29 K. Operating at 5 K in pulsed mode, the threshold current density is 840 A/cm 2 , and the peak power is approximately 2.5 mW. Based on the relatively high operating temperatures and duty cycles, we propose that direct LO-phonon-based depopulation is a robust method for achieving quantum cascade lasers at long-wavelength THz frequencies.

We combine photonic crystal and quantum cascade band engineering to create an in-plane laser at terahertz frequency. We demonstrate that such photonic crystal lasers strongly improve the performances of terahertz quantum cascade material in terms of threshold current, waveguide losses, emission mode selection, tunability and maximum operation temperature. The laser operates in a slow-light regime between the M saddle point and K band-edge in reciprocal lattice. Coarse frequency control of half of a terahertz is achieved by lithographically tuning the photonic crystal period. Thanks to field assisted gain shift and cavity pulling, the single mode emission is continuously tuned over 30 GHz.

We report lasing at ∼3.0 THz (λ≈98–102 μm) in a quantum-cascade structure in which mode confinement is provided by a double-sided metal waveguide. The depopulation mechanism is based on resonant phonon scattering, as in our previous work. Lasing takes place in pulsed mode up to a heat-sink temperature of 77 K. The waveguide consists of metallic films placed above and below the 10-μm-thick multiple-quantum-well gain region, which gives low losses and a modal confinement factor of nearly unity. Fabrication takes place via low-temperature metallic wafer bonding and subsequent substrate removal using selective etching. This type of waveguide is expected to be increasingly advantageous at even longer wavelengths.