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For the first time, the thermo-emf is calculated in the two-temperatures approximation and taking into account non-equilibrium charge carriers. The results strongly differ from the results obtained in the one-temperature approximation. To emphasize the role played by these non-equilibrium charge carriers, it was considered a very thin semiconductor sample, so recombination processes and energy exchange processes are not present. The thermo-emf generated depends only on electron's parameters and Peltier's resistance appears.

A graphical method of obtaining a current-voltage characteristic in long diodes is given and a criterion for occurrence of current controlled negative resistance in such diodes is proposed. The criterion is applied to negative resistance due to mobility modulation. Contributions of concentration and depth of level of deep impurity to this mechanism are investigated numerically.

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