Three-dimensional (3D) photonic crystals containing artificial point defects have been fabricated to emit light at optical communications wavelengths. They were constructed by stacking 0.7-micrometer-period gallium arsenide striped layers, resulting in a 3D "woodpile" photonic crystal. Indium-gallium arsenide-phosphide quantum-well layers emitting at a wavelength of 1.55 micrometers were incorporated in the center of the crystal. Samples having up to nine stacked layers were constructed, and artificial point-defect cavities of different sizes were formed in the light-emitting layer. Light emission was suppressed in the photonic crystal regions, whereas cavity modes were successfully observed at the point defects and were size dependent.

Shorter-wavelength surface-emitting laser sources are important for a variety of fields, including photonics, information processing, and biology. We report on the creation of a current-driven blue-violet photonic-crystal surface-emitting laser. We have developed a fabrication method, named "air holes retained over growth," in order to construct a two-dimensional gallium nitride (GaN)/air photonic-crystal structure. The resulting periodic structure has a photonic-crystal band-edge effect sufficient for the successful operation of a current-injection surface-emitting laser. This represents an important step in the development of laser sources that could be focused to a size much less than the wavelength and be integrated two-dimensionally at such short wavelengths.

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