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Galvanomagnetic measurements at 4.2 K in fields up to 7 T under hydrostatic pressures up to 2.5 GPa are presented for a series of GaSb/InAs/GaSb quantum wells with different cap-to-well ratios and interface type. The pressure derivatives of electron and hole concentrations have been obtained from Shubnikov-de Haas (ShdH) oscillations and from fitting the low field data to the classical two-carrier model. Above the pressureinduced metal-insulator transition, a strong negative magnetoresistance occurs which is attributed to localisation associated with the presence of GaSb surface donors.

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