InSb enhancement-mode, metal-insulator-semiconductor, field-effect transistors with 1 μm gate lengths have been fabricated. When operated at room temperature with less than 0.5 V applied between the source and drain, the transistors have a static dynamic range in excess of 20 dB, a cut-off frequency (fT) of 14 GHz and a transconductance, at 1 GHz, of 230 mS mm−1. Analysis of the parasitic capacitances indicates an intrinsic fT of about 90 GHz. The static electron mobility in the channel is 2×104 cm2 V−1 s−1, so a carrier velocity of about 3.7×107 cm s−1 should be attained. This leads to a predicted frequency response of 84 GHz, in reasonable agreement with the intrinsic microwave data.

No abstract

High-speed, low-power consumption field-effect transistors fabricated from InSbhn,.xA1xSb are demonstrated. A 0.7 pm gate-length enhancement-mode device shows an f, of 74 GHz, and anfm, of 89 GHz, at a drain voltage below 0.5 V. This is the fastest reported transistor for its gate length, as far as is known.

No abstract

Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this material using mesa technology and flip-chip bonding. We have demonstrated excellent resistance-area product characteristics for diodes with a 10.2μm cutoff wavelength. R0A values approaching 103Ωcm2 at 80K have been measured and the resistance-area product maintained above 102Ωcm2 at 1V reverse bias. Variable temperature R0A values correspond to expected generation-recombination loss mechanisms between 60 and 120K. Current-voltage characteristics of two diodes at opposite sides of an array indicate that a very uniform imaging long-wavelength infrared array could be fabricated from this material.