Articles you may be interested inPlasma parameter and etch measurements in a multipolar confined electron cyclotron resonance discharge J. Vac. Sci. Technol. B 9, 29 (1991); 10.1116/1.585786Charged particle densities and energy distributions in a multipolar electron cyclotron resonant plasma etching source J.Etching of silic~n and SiO z has been in~estigated ~n a dc plasma discharge confined by a multipolar surface magnetlc field layer. The reactIve plasma IS produced by primary ionizing electrons drawn from heated tungsten filaments and confined by permanent magnets. Electrical probe measurements show that a unif~~ high-density plasma.( 1010 ~ 1011 cm -3) is sustained in SF 6-0Z at very low pressure (0.2-2.0 X 10 Torr). Substrates are biased mdependently of plasma production by a 10w-fre~uency .alternating voltage (0-400 V) applied to the substrate through a blocking capacitor.Arusotroplc profiles are etched into Si in SF 6 -20% 0z with etch rates in excess of 1 ,urn/min at 2x 10-3 Torr. The etch rate increases with increasing primary electron current (up to 3 A) and energy (up to 60 e V), gas pressure (up to 2.0 X 10-3 Torr), substrate bias voltage, and the addition of up to 20% ?2' ~or hig?erionizing electron energies ( > 60e V) and higher gas pressure ( > 2.0 X 10-3 Torr). etc~g ~s partI~ly bloc~ed by residue formation. The etch anisotropy depends mainly on substrate bIas,. mcreasmg .for higher values of bias voltage. The Si:SiO z etch selectivity is typically 10-20, becommg large With decreasing substrate bias and pl.asma ion density. 1638

A plasma etching reactor is described which combines a primary electron source, surface magnetic field confinement, and independently controlled substrate biasing. Preliminary measurements show that the reactor produces a large volume of dense plasma at low pressure. The plasma parameters are uniform to within ±1% over the working volume, with almost no perturbing radio-frequency electric fields. Profiles can be etched into polysilicon in CF4 plasmas with etch rates ≥2000 Å/min.

Intermolecular potential energy surface and spectra of He-HCl with generalization to other rare gas-hydrogen halide complexes Generation of soft x rays using a rare gashydrogen plasma focus and its application to xray lithography Appl. Phys. Lett. 48, 686 (1986); 10.1063/1.96743 Summary Abstract: Impact collision ion scattering spectroscopy using noble gas and alkali ions for surface structure analysis J. Vac. Sci. Technol. A 3, 1514(1985; 10.1116/1.573163 Summary Abstract: Hydrogen plasma etching of semiconductors and their oxides

Plasma etching of silicon with H2 and Cl2 was simulated with mixtures of H2, Cl2, and SiCl4. The gas phase chemistry was elucidated by varying power and pressure. The cross sections for production of H (3p2P) atoms were probed through the emission response to pressure variations. Addition of rare gases to a hydrogen plasma identified qualitatively major energy transfer paths between the rare gas metastables and the H2/H system. We conclude that dissociation of hydrogen molecules and excitation of hydrogen atoms are separate electron impact collisional events that constitute the main excitation route in a hydrogen plasma. We find further that the role of metastable H atoms in the 2s2S state at 10.19 eV is minor, and that the direct dissociative excitation in a single electron impact at 16.57 eV is insignificant. The occurrence of state specific collisional energy exchange has limiting consequences for any actinometric method.

Articles you may be interested inReview of trench and via plasma etch issues for copper dual damascene in undoped and fluorine-doped silicate glass oxide