Silicon Carbide (SiC) samples with controlled carbon contents are manufactured from polymeric precursors. Based on X-ray diffraction (XRD) data, a correlation of the excess carbon content and the crystallization kinetics of silicon carbide are determined for the obtained pyrolysates. The crystallization mechanisms as well as the corresponding activation energies E A are also determined. Furthermore, the influence of the carbon content on the oxidation behavior of these pyrolysates is studied. A model for the oxidation of the prepared silicon carbide-based materials is proposed. (all MPI-IS) for their support with the TEM and SEM measurements, respectively. M. Dudek, A. Fuchs, and S. Hammoud (all MPI-IS) are thanked for their XRD measurements, BET measurements, and chemical analysis, respectively.

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