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A new degradation mode induced by bias temperature (BT) instability is found in short channel p+ polysilicon gate (p+-gate) pMOSFETs. This instability, i.e. negative threshold voltage shift, increases significantly by reducing gate length due to the local degradation of gate oxide near the source/drain (S/D) edge, as a result of the electrochemical reaction between holes and oxide defects. This degradation is enhanced by boron penetration through the oxide from the p+-gate peculiar to p+-gate MOS structures. These results indicate that it is important to suppress BT instability of p+-gate pMOSFETs for scaling down CMOS devices.