The distribution of the main components of compounds in In2S3InAs heterostructure interface region is investigated with the help of X‐ray electron probe microanalysis. By the substitution of arsenic for sulphur In2S3 layers were formed in the nearsurface region of indium arsenide. A transition region (S') is proved to exist in the heterosystem. The peculiarities of the voltage‐capacitance characteristics are explained in the frameworks of a MIS structure model as due to the participation of the free charge carriers in the S'‐layer in the screening of the external electric field. The possibility of evaluation of the transition region parameters in heterostructures by C–U characteristics is shown.

⎯Layers of porous silicon (PS), multilayered ZnO films, and heterostructures based on them are obtained. The surface morphology, chemical and phase composition of the PS layers and ZnO films, and the transverse cleavage of ZnO-PS nanocomposite, are investigated via energy-dispersive X-ray spectral analysis (EDX), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The current-voltage characteristics

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Были получены слои пористого кремния (PS), многослойные пленки ZnO и гетероструктуры на их основе. Методами рентгеноспектрального энергодисперсионного анализа (EDX), рентгенофазового анализа (РФА) и растровой электронной микроскопии (РЭМ) была исследована морфология поверхности, химический и фазовый состав слоя PS и пленок ZnO, поперечный скол нанокомпозита (ZnO-PS). Проведены исследования вольт-амперных характеристик гетероструктур Al/