Infrared photodetectors have received much attention for several decades due to their broad applications in the military, science, and daily life. However, for achieving an ideal signal-to-noise ratio and a very fast response, cooling is necessary in those devices, which makes them bulky and costly. Thus, room-temperature infrared photodetectors have emerged as a hot research direction. Novel low-dimensional materials with their easy fabrication and excellent photoelectronic properties provide a possible solution for room-temperature infrared photodetectors. This review aims to summarize the preparation methods and characterization of several low-dimensional materials (PbS, PbSe and HgTe, new two-dimensional materials) with great concern and the room-temperature infrared photodetectors based on them.

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