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This paper presents a novel method of using Interactive Evolutionary Computation (IEC) for the design of Microelectromechanical Systems (MEMS). A key limitation of IEC is human fatigue. Based on the results of a study of a previous IEC MEMS tool, an alternate form that requires less human interaction is presented. The method is applied on top of a conventional multi-objective genetic algorithm, with the human in a supervisory role, providing evaluation only every n th -generation. Human interaction is applied to the evolution process by means of Pareto-rank shifting, which is used for the fitness calculation used in selection.Results of a test of 13 users shows that this IEC method can produce statistically significant better MEMS resonators than non-interactive evolutionary synthesis.

The carrier transport properties under high field have been studied in Si MOSFETs experimentally from the following two points of view; velocity saturation and impact ionization. The electron and hole velocities in the inversion-layer were measured as a function of tangential electric field using high-resistive gate MOSFETs. It .has been found that the saturation velocity is dependent on the surface carrier concentration. The impact ionization rate was studied as a parameter of the length of the pinch-off region in MOSFETs. The suppression of the ionization rate and the enhancement of anisotropic impact ionization have been simultaneously observed at 81 K in the MOSFETs with the shorter length of pinch-off region. The non-stationary transport of hot carriers in the pinch-off region is responsible for these phenomena.