The carrier transport properties under high field have been studied in Si MOSFETs experimentally from the following two points of view; velocity saturation and impact ionization. The electron and hole velocities in the inversion-layer were measured as a function of tangential electric field using high-resistive gate MOSFETs. It .has been found that the saturation velocity is dependent on the surface carrier concentration. The impact ionization rate was studied as a parameter of the length of the pinch-off region in MOSFETs. The suppression of the ionization rate and the enhancement of anisotropic impact ionization have been simultaneously observed at 81 K in the MOSFETs with the shorter length of pinch-off region. The non-stationary transport of hot carriers in the pinch-off region is responsible for these phenomena.

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Pin =Pout * 1E-(1.94/10) *lE-(0.16*50/10) * lE-(6.48/10) = 22.6E-3 * Pout Pstray = ( Pout * 0.20 + Pout * 0.80 * 0.01 ) * 0.005 = 1.04E-3 * Pout here Pout = 1.00E-3 (W) ---(mu.2) peflective @Tx = 99% ' Transparent @Rx = S?