Experimental Study Of Threshold Voltage Fluctuations Using An 8k MOSFET's Array

Mizuno,; Okamura,; Toriumi,

doi:10.1109/vlsit.1993.760235

Cited by 58 publications

(13 citation statements)

References 3 publications

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“…The field-effect transistors (FETs) are the workhorse of the microelectronics industry [26]. A decade ago, the channel lengths of FETs were at micrometer level, and the fluctuation of dopants in the bulk device has nearly no impact on the threshold voltage [27,28]. When the gate length of MOSFET is only ~10 nm, the active channel region of devices will only contain several dopants, and the fluctuation in dopant number will generate much stronger random telegraph noise than the average threshold voltage [29] , [30].…”

Section: Dendrimers -Fundamentals and Applicationsmentioning

confidence: 99%

Dendrimers as Dopant Atom Carriers

Wu¹,

Dan²

2018

Dendrimers - Fundamentals and Applications

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Properties of modern semiconducting transistors and future electron or quantum devices are essentially determined by single dopant atoms. How to precisely control the individual dopant position is one of the key factors to advance these technologies. In this chapter, we first briefly introduce the research progress in single dopant devices. To fabricate single dopant devices at large scale, we then overview our previous propose to control the locations of single dopants by self-assembly of large molecules (polyglycerols) with each carrying one dopant atom. The synthesis process, doping properties, and challenges of the molecular doping technique will be thoroughly elaborated before we conclude this chapter.

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Section: Dendrimers -Fundamentals and Applicationsmentioning

confidence: 99%

Dendrimers as Dopant Atom Carriers

Wu¹,

Dan²

2018

Dendrimers - Fundamentals and Applications

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“…With the assumption that voltage ripple (V QB ) developed at QB will lie near zero and hence V DS is arbitrarily taken to be 0.2V with the corresponding V DSAT = 0.2711V and V tn = 0.59V. The value of V QB as a function of CR using 32 nm CMOS BPTM is computed on the basis of these assumption using (4) and (5). Fig.…”

Section: Sram's Mode Of Operationsmentioning

confidence: 99%

“…Due to aggressive scaling of device dimensions, random variations in process, supply voltage and temperature (PVT) poses major challenges to the future high performance circuits and system design [1][2][3]. The microscopic variations in number and location of dopant atoms in the channel region of the device induce deviations in device characteristics [4][5][6]. These fluctuations are more pronounced in minimum-geometry devices commonly used in area-constraint circuits such as SRAM cells [7].…”

Section: Introductionmentioning

confidence: 99%

Variability Analysis of 6t and 7t Sram Cell in Sub-45nm Technology

Islam¹,

Hasan²

2011

IIUMEJ

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This paper analyses standard 6T and 7T SRAM (static random access memory) cell in light of process, voltage and temperature (PVT) variations to verify their functionality and robustness. The 7T SRAM cell consumes higher hold power due to its extra cell area required for its functionality constraint. It shows 60% improvement in static noise margin (SNM), 71.4% improvement in read static noise margin (RSNM) and 50% improvement in write static noise margin (WSNM). The 6T cell outperforms 7T cell in terms of read access time (TRA) by 13.1%. The write access time (TWA) of 7T cell for writing "1" is 16.6 x longer than that of 6T cell. The 6T cell proves it robustness against PVT variations by exhibiting narrower spread in TRA (by 1.2 x) and Twa (by 3.4x). The 7T cell offers 65.6% saving in read power (RPWR) and 89% saving in write power (WPWR). The RPWR variability indicates that 6T ell is more robust against process variation by 3.9x. The 7T cell shows 1.3x wider write power (WPWR) variability indicating 6T cell's robustness against PVT variations. All the results are based on HSPICE simulation using 32 nm CMOS Berkeley Predictive Technology Model (BPTM).

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“…In bulk technology, n c,bulk = N ch,bulk X dep W L, with X dep the thickness of the channel depletion layer, and in FD SOI technology, n c,SO I = N ch,SO I T Si W L. If we assume a Gaussian distribution for the channel dopants, we have σ 2 n c = n c [Skotnicki et al 2008;Mizuno et al 1993]. Injecting these relationships in Eq.…”

Section: Pre-silicon Fully Depleted Soi Compact Mosfet Modelsmentioning

confidence: 99%

Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic---Mitigation at Technology and Circuit Levels

Bol

Flandre

Legat

2010

ACM Trans. Des. Autom. Electron. Syst.

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Subthreshold operation of digital circuits enables minimum energy consumption. In this article, we observe that minimum energy E min of subthreshold logic dramatically increases when reaching 45nm CMOS node. We demonstrate by circuit simulation and analytical modeling that this increase comes from the combined effects of variability, gate leakage, and Drain-Induced Barrier Lowering (DIBL) effect. We then investigate the new impact of individual MOSFET parameters L g , V t , and T ox on E min in sub-45nm technologies. We further propose an optimum MOSFET selection, which favors low-V t mid-L g devices in 45nm CMOS technology. The use of such optimum MOSFETs yields 35% E min reduction for a benchmark multiplier with good speed performances and negligible area overhead. This optimum MOSFET selection can easily be integrated into a standard EDA tool flow by appropriate selection of the standard cell library.We finally demonstrate that undoped-channel fully-depleted Silicon-On-Insulator (SOI) technology brings 60% E min reduction with baseline MOSFETs thanks to strong mitigation of variability and short-channel effects. This study reveals a new (à priori counterintuitive) paradigm in device optimization for subthreshold logic: relaxing gate leakage constraints to improve robustness against short-channel effects and variability. Additionally, we propose pre-Silicon BSIM4 MOSFET model cards for realistic subthreshold circuit simulations including variability in bulk and fully depleted SOI technologies, which are made available online.

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Experimental Study Of Threshold Voltage Fluctuations Using An 8k MOSFET's Array

Cited by 58 publications

References 3 publications

Dendrimers as Dopant Atom Carriers

Dendrimers as Dopant Atom Carriers

Variability Analysis of 6t and 7t Sram Cell in Sub-45nm Technology

Nanometer MOSFET Effects on the Minimum-Energy Point of Sub-45nm Subthreshold Logic---Mitigation at Technology and Circuit Levels

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