Thermal evaporation is a simple and high-speed method to grow a BaSi 2 thin film, which is an emerging candidate for an absorber-layer material of thin-film solar cells. In this study, we have investigated the preferred orientation of BaSi 2 films grown at substrate temperatures of 600-700• C by thermal evaporation using X-ray diffraction. 2θ-ω scans show that peaks derived from (100) orientation grow steadily with increasing substrate temperature. By Xray pole figure analysis, the (100)-oriented crystals are proven to be epitaxially grown on Si(100) with two variants. The reason of epitaxial growth is discussed from the epitaxial temperature.