Abstract:Monitoring of volatile organic compounds (VOCs) is of increasing importance in many application fields such as environmental monitoring, indoor air quality, industrial safety, fire detection, and health applications. The challenges in all of these applications are the wide variety and low concentrations of target molecules combined with the complex matrix containing many inorganic and organic interferents. This paper will give an overview over the application fields and address the requirements, pitfalls, and possible solutions for using low-cost sensor systems for VOC monitoring. The focus lies on highly sensitive metal oxide semiconductor gas sensors, which show very high sensitivity, but normally lack selectivity required for targeting relevant VOC monitoring applications. In addition to providing an overview of methods to increase the selectivity, especially virtual multisensors achieved with dynamic operation, and boost the sensitivity further via novel pro-concentrator concepts, we will also address the requirement for high-performance gas test systems, advanced solutions for operating and read-out electronic, and, finally, a cost-efficient factory and on-site calibration. The various methods will be primarily discussed in the context of requirements for monitoring of indoor air quality, but can equally be applied for environmental monitoring and other fields.

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The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators between charge storage layers and control gates in flash devices. For this application, large band gaps (> 6 eV) and band offsets are required, as well as low trap densities. Materials studied include aluminates and scandates. For DRAM metal-insulator-metal (MIM) capacitors, aggressive scaling of the equivalent oxide thickness (with targets down to 0.3 nm) drives the research towards dielectrics with k-values > 50. Due to the high aspect ratio of MIMCap structures, highly conformal deposition techniques are needed, triggering a substantial effort to develop Atomic Layer Deposition (ALD) processes for the deposition of metal gates and high-k dielectrics. Materials studied include Sr and Ba-based perovskites, with SrTiO3 as one of the most promising candidates, as well as tantalates, titanates and niobates.

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