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High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap Appl. Phys. Lett. 93, 143502 (2008); 10.1063/1.2988894Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin ( 80 nm ) Si 1 − x Ge x step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on Si/Si–Ge substrate using molecular beam epitaxy at different growth temperatures. The sample grown at 420°C showed the highest energy conversion efficiency, with a short circuit current of 18 mA/cm2 and open circuit voltage of 0.53 V. With different growth temperature, performance of the cells degrade, which is attributed to the increase of nitrogen‐related defects and the decrease of antimony incorporation at higher growth temperature. Copyright © 2017 John Wiley & Sons, Ltd.

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We report the performance of 1-eV GaNAsSb-based photovoltaic samples grown on a Si substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) ratios. The light current-voltage curve and spectral response of the samples were measured. The sample grown at an As/Ga BEP ratio of 10 showed the highest energy conversion efficiency with an open circuit voltage (V OC ) of 0.529 V and a short circuit current density of 17.0 mA/cm 2 . This measured V OC is the highest ever reported value in GaNAsSb 1-eV photovoltaic cell, resulting in the lowest ever reported E g /q-V OC of 0.50 eV. The increase in the As/Ga BEP ratio also resulted in an increase in the bandgap-voltage offset value (E g /q-V OC ) and a decrease in quantum efficiency up to As/Ga BEP ratio of 18.