In this study, we report electric discharge machining (EDM) as a new cutting method for silicon carbide (SiC) single crystals. Moreover, we discuss characteristics and usefulness of the EDM for the SiC. The EDM realized not only high speed and smooth cutting but also lower surface damage. Defect propagation in the EDM SiCs have been also estimated by etch pits observation using molten KOH, however, we confirmed the EDM has caused no damage inside the SiCs in spite of high voltage and high temperature during the machining.

Diamond saw is generally used to make the silicon carbide (SiC) wafers from ingots, but it takes long time for cutting. We have used the electric discharge machining (EDM) to cut SiC. The cutting speed of EDM for SiC is almost 10 times faster than the diamond saw, and the surface roughness is 1/10 for the diamond saw. EDM cut SiC by the plasma produced between the wire and SiC material. The emissions from EDM plasma may involve much information for EDM cutting. We monitored the total light intensity by a photodiode, and observed the spectrum of the emission from EDM plasma by a visible spectroscopy. The discharge gas used helium and argon. In both discharges, the light emission was observed when the current was not zero. Also, many lines were observed Si I, Si II and C I from the SiC sample, and Cu I and Zn I from the wire. And, the electron temperature of EDM plasma was estimated to be under several eV because the observed lines were almost the emission from atoms. Also, the scars, which show the copper-alloy wire was hurt by discharge, were observed from the wire.

We report on the discharge gas of the electric discharge machining (EDM) for silicon carbide (SiC) single crystal. We investigated the cutting speed and the kerf loss of EDM for SiC by using three kinds discharge gases: Ar, Ar+CH4(10%) and Ar+CF4(10%). The maximum cutting speed of EDM in Ar, Ar+CH4(10%) and Ar+CF4(10%) was 0.02mm/min, 0.04 mm/min and 0.06 mm/min, respectively. The kerf loss of EDM in Ar, Ar+CH4(10%) and Ar+CF4(10%) was 490m, 430m and 470m, respectively. It is shown that cutting with a smooth edge and low kerf loss is faster by mixing CH4 or CF4 in Ar.

In order to cut the ingots and slabs of the silicon carbide (SiC), we developed the new method of electric discharge machining (EDM). EDM is usually used for the machining of the metals, and if it is electric conductive material, it is effective for the machining. However, if the electrical resistivity of SiC is high, the electric current cannot be large enough for and the EDM, and we failed the machining of SiC. Therefore, we use three methods to keep higher electric conduction. One is photoconductive, the second is high electric field effect and it is called avalanche effect, and the third is high temperature effect because usually the resistivity is low when the semiconductor or insulation materials are in high temperature. Thus, we applied three method, and finally can cut the SiC slabs of the resistivity of the order of 10 Ωm, which is almost 1000 times higher than that of the ordinary EDM at least. The flatness of the cutting surface is the same of the metals’ and the cutting rate for the SiC ingots is 10 times higher than that of diamond saw. This technique will be effective for the related materials of SiC, such as diamonds and GaN.