In this work, we performed molecular dynamics simulations of liquid-crystalline epoxy resins using the simulation system OCTA in combination with J-OCTA. One molecule was modeled as a diamine, the ends of which are connected to derivatives of diepoxy mesogens. The number of molecules in the system was eight for the present simulation. The molecular ends were drawn by an external force in order to generate a well-aligned initial structure. We relaxed the system after removing the external force and calculated statistical average. The results exhibited an even-odd effect of density and alignment order for the number of methylene units in the mesogenic structure. The obtained alignment order of the epoxy molecules showed a strong correlation with the experimentally obtained thermal conductivity. Finally, we proposed a protocol for using the present simulation to screen for epoxy molecules of higher thermal conductivity.

We have developed an advanced micro-lithographic process for producing 0.1 µm contact holes (CH). A chemical shrink technology, resolution enhancement lithography assisted by chemical shrink (RELACS) utilizes the cross-linking reaction catalyzed by the acid component existing in a predefined resist pattern. This “RELACS” process is a hole shrinking procedure that includes simple coating, baking, and rinse steps applied after conventional photolithography. We evaluated the dependency of CH shrinkage on resist formulation. Though the acetal type KrF positive resist (low activation energy system) can achieve around 0.1 µm CH after RELACS processing under the optimized condition, the acrylate type positive resist (high activation energy system) showed less shrinkage under the same process condition. The shrinkage performance of the RELACS process largely depends on the resist chemistry used as the underlying layer. The results of these studies are discussed in terms of the influence of the base polymer on shrinkage performance and tendency.

The current performance of a 10-m grazing incidence monochromator (GIM) is described. A resolution of 51, 95, and 220 meV (FWHM) has been achieved at 287, 401, and 867 eV, respectively, inferred from the linewidths for the K-shell resonances of gaseous CO, N2, and Ne. A photon flux of ≂1012 photons/s is obtainable at the first harmonic of undulator radiation with a 1200-ℓ /mm grating and 50-μm slit openings, which correspond to Δλ=0.04 Å.

Mitsubishi Electric Corporation (MELCO) has developed an advanced microlithographic process for producing O.1.tm contact holes (CH). A chemical shrink technology, RELACSTM (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the crosslinking reaction catalyzed by the acid component existing in a predefined resist pattern 1,2 This "RELACSTM" process is a hole shrinking procedure that includes simple coating, baking, and rinse steps applied after conventional photolithography. This paper examines the process parameters affecting shrinkage of CH size. We subsequently evaluated the dependency of CH shrinkage on resist formulation.We conducted investigations of shrink magnitude dependency on each process parameter.. Photoresist lithography process: CH size, exposure dose, post development bake temperature . AZ® R200 (a product of Clariant (Japan) K.K.) RELACSTM process: Soft bake temperature, film thickness, mixing bake temperature (diffusion bake temperature), etc. We found that the mixing bake condition (diffusion bake temperature) is one of most critical parameters to affect the amount ofCH shrink.Additionally, the structural influence ofphotoacid generators on shrinkage performance was also investigated in both high and low activation energy resist systems. The shrinkage behavior by the photoacid generator of the resist is considered in terms ofthe structure (molecular volume) ofthe photogenerated acid and its acidity (pKa).The results of these studies are discussed in terms of base polymer influence on shrinkage performance and tendency. Process impact of the structure and acidity of the photogenerated acid is explored. Though the experimental acetal type KrF positive resist (low activation energy system) can achieve around 0. 1j.m CH after RELACSTM processing under the optimized condition, the experimental acrylate type positive resist (high activation energy system) showed less shrinkage under the same process condition. The shrinkage performance of RELACSTM process largely depends on the resist chemistry used as the underlying layer. Further, shrinkage degree can be controlled by process optimization even for the high activation energy type photoresist.

In our previous paper [Jpn. J. Appl. Phys. 40 (2001) 419], we reported the development of an advanced micro-lithographic process for producing 0.1 µm contact holes by KrF excimer laser (248 nm) lithography. This chemical shrinkage technology, called resolution enhancement lithography assisted by chemical shrink (RELACS), utilizes the cross-linking reaction catalyzed by the acid component remaining in a predefined resist pattern. We report herein the results of the application of RELACS to i-line (365 nm) lithography. The properties of RELACS for i-line lithography were very different from those for KrF lithography. This is due to the difference in chemical mechanism between i-line and KrF resists. The characteristics of the application of RELACS to i-line lithography were studied by conducting basic experiments on the addition of a photo-acid generator (PAG) to an i-line resist and investigating the property of the cross-linking reactions involved in the pre-doping of various acids to RELACS film. Finally, we optimized RELACS materials to match i-line resist and realized the fabrication of contact holes less than 0.2 µm diameter by i-line lithography.