Advanced Micro-Lithography Process for i-line Lithography

Abstract

In our previous paper [Jpn. J. Appl. Phys. 40 (2001) 419], we reported the development of an advanced micro-lithographic process for producing 0.1 µm contact holes by KrF excimer laser (248 nm) lithography. This chemical shrinkage technology, called resolution enhancement lithography assisted by chemical shrink (RELACS), utilizes the cross-linking reaction catalyzed by the acid component remaining in a predefined resist pattern. We report herein the results of the application of RELACS to i-line (365 nm) lithography. The properties of RELACS for i-line lithography were very different from those for KrF lithography. This is due to the difference in chemical mechanism between i-line and KrF resists. The characteristics of the application of RELACS to i-line lithography were studied by conducting basic experiments on the addition of a photo-acid generator (PAG) to an i-line resist and investigating the property of the cross-linking reactions involved in the pre-doping of various acids to RELACS film. Finally, we optimized RELACS materials to match i-line resist and realized the fabrication of contact holes less than 0.2 µm diameter by i-line lithography.

The resolution enhancement lithography assisted by chemical shrink based on KrF lithography technology

“…The background of this technology stems from the challenge to manufacture advanced semiconductor devices with 0.1 µm Critical Dimension (CD). With the increase in the integration density of semiconductor devices, the required pattern pitch and width become smaller than the representative resolution limit of KrF lithography (0.18 µm) [1,2] . To meet this requirement, several advanced technologies are proposed: 1.…”

A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

“…We used SiN film deposited by the Cat-CVD after NH 3 treatment for surface passivation layer. By using micro-lithographic process, called RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) process [4,5], and inductively coupled plasma (ICP) etching process, a 0.25 µm gate length was formed (Fig. 2).…”

Parallelizable Simulation of Material Effects of Chemical Shrink Process of Nanolithography

“…Shrunken patterns are attained after the rinsing step. The RELACS process has been applied to the i-line, 6) the 248 nm, 5) the 193 nm, 3) the 157 nm, 1) and the electron-beam 7) lithography. Using the RELACS process, the last three of the lithographic technologies mentioned above were demonstrated to shrink the contact holes down to the sub-100 nm region.…”