We prototyped a 6.0-in. color sequential XGA LCD using an oxide semiconductor. A color sequential LCD has lower power consumption than a color filter LCD because light use efficiency is better. We utilize the low I off of the oxide semiconductor and make frame rate lower, which leads to the lower power consumption of drivers. The color sequential LCD can have a monochrome electronic paper function with a white backlight on.

We have developed a highly efficient top-emitting white OLED by employing a stable reflective anode structure and a p-doped buffer layer. Furthermore, combining the white OLED with color filters, we succeeded in fabricating a prototype of a highdefinition AMOLED display having highly reliable OS-FETs as the backplane.

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In 2009, a crystalline oxide semiconductor with a layered structure, which we refer to as c‐axis–aligned crystalline indium‐gallium‐zinc oxide (CAAC‐IGZO), was first discovered. CAAC‐IGZO has a peculiar crystal structure in which clear grain boundaries are not observed despite high c‐axis alignment and absence of a‐b plane alignment. When compared to a Si field‐effect transistor (FET), a metal‐oxide‐semiconductor (MOS) FET, utilizing CAAC‐IGZO, presents lower off‐state current (on the order of yA [10−24 A]). These unique characteristics allow CAAC‐IGZO to realize devices with low power consumption. With the emerging era of artificial intelligence, wherein power saving becomes more significant, CAAC‐IGZO has attracted attention as a potential replacement for Si. This paper describes the characteristics and potentials of CAAC‐IGZO for the development of memory devices with unprecedented functions.

We realized a blue-phase liquid crystal display with low driving voltage and high contrast by using a liquid crystal material which is easily twisted and a protrusion electrode structure. Further, we made a prototype of a 3.4-inch panel by a novel manufacturing process suitable for a large-sized panel.