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InGaP/InGaAs-integrated enhancement/depletion-mode doped-channel pseudomorphic HFETs, fabricated on the same chip by a selective etching process, are demonstrated for the first time. For the depletion-mode device, the drain-to-source saturation voltage is only 0.3 V as V GS is fixed at 0 V. An extrinsic transconductance of 411 (278) mS mm −1 and a saturation current density of 221 (482) mA mm −1 are obtained for the enhancement (depletion) device. Furthermore, the noise margins NM H and NM L values are up to 0.731 V (0.72 V) and 0.28 V (0.755 V) at a supply voltage of 1.5 V (2.0 V) in the direct-coupled FET logic application.

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