We study the appearance of both scribing failures and Cu-rich debris, formed during Cu(In,Ga)Se 2 (CIGS) coevaporation, in electroluminescence (EL) and dark lock-in thermography (DLIT) images. We observe that for most of the defect types, there is a characteristic appearance of EL and DLIT that allows reliable diagnostics. We also point to defect scenarios where different defects appear similar. With regard to scribing defects, we find that the reliability of defect identification increases with the length of the line interruption, while for Cu-rich debris, we find that the geometrical size and position within the cell significantly determine its defect appearance and, therefore, the ability to diagnose it.

Intentionally implemented scribing failures in Cu(In,Ga)Se2 modules are studied using electroluminescence (EL) and dark lock‐in thermography (DLIT). While the EL images do not allow a non‐ambiguous defect distinction, the DLIT images reveal characteristic defect patterns for each defect type. In order to explain the DLIT defect appearance, we model and simulate the scribing defects in a network simulation model. The simulations yield characteristic current flow patterns for each scribing defect type and thus aid in the understanding and interpretation of the measurements.

A new type of plasma source to maintain a free‐standing, linearly extended plasma was studied. The plasma reactor is a microwave concentrator which is comprised of a cylindrical cavity with an elliptical base and a microwave antenna near one of its focal lines and is operated at f = 2.45 GHz. Numerical simulations and measurements of the microwave pattern inside the assembly were found to be in good agreement with each other. Electron densities and electron temperatures were measured using Langmuir probes. A completely free‐standing plasma inside an evacuated glass tube was achieved for certain combinations of gas pressure and injected power.

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