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Tungsten, titanium, molybdenum, and hafnium are evaluated as ’’barrier’’ metals for preventing gallium (Ga) and arsenic (As) out-diffusion from sintered Pt–GaAs contacts. Secondary ion mass spectrometry (SIMS) and x-ray diffraction are employed to qualitatively assess the extent of interdiffusion and intermetallic compound formation which occur in these contacts as a result of heat treatment. In spite of the complex nature of the metallurgical reactions and despite inherent limitations in the analysis, tungsten and hafnium are clearly shown to be effective in preventing Ga and As out-diffusion from sintered Pt–GaAs contacts.