High purity LPE InP

Wrick, V. L.; Ip, K.T.; Eastman, L.F.

doi:10.1007/bf02655677

Cited by 31 publications

(8 citation statements)

References 3 publications

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“…The data are representative of more than one sample grown under identical conditions. It might be noted that mobility at 77 K in our samples are lower than the highest values measured in undoped LPE InP (4,9), but are still of the order of values claimed to be reasonably good (5).…”

Section: Methodsmentioning

confidence: 48%

A Study of Impurities and Traps in Liquid Phase Epitaxial InP in Relation to Melt Prebaking

Rhee

Bhattacharya

1983

J. Electrochem. Soc.

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Deep-and shallow-level defects in liquid phase epitaxial InP have been detected and characterized by transient capacitance, Hall transport, and photoluminescence measurements. The background impurity levels in the undoped crystals were varied by varying the period of prebaking of the In melt. A single deep electron trap with activation energy AET = 0.38 -+ 0.02 eV is present dominantly with a concentration almost three orders lower than the background carrier concentration in the layers. From electron capture measurements, the electron capture cross section is found to obey the law ~r,(T) = 4.78 + 10 -15 exp (-0.13/kT). The consistency of its concentration, irrespective of the purity of the crystal, and its removal after short-term heat-treatment leads us to believe that the trap is related to native defects. A hole trap with an activation energy of 0.22 eV was detected in some samples at low temperatures.

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Section: Methodsmentioning

confidence: 48%

A Study of Impurities and Traps in Liquid Phase Epitaxial InP in Relation to Melt Prebaking

Rhee

Bhattacharya

1983

J. Electrochem. Soc.

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“…Similarly one obtains for reaction [2] K2 ~---1/(Psio 9 PH20) = exp (--AG~ [3] To calculate hG~ and 5G~ reactions [1] and [2] are divided into subreactions. For reaction [1] (…”

Section: Calculation Of Sio Partial Pressurementioning

confidence: 99%

“…In the growth of InP and GaInAsP by LPE, silicon is normally the dominant residual donor. The reason for this is its high distribution coefficient (~ 30 for InP) (3). The source of the silicon can be both the starting materials (especially the indium) and the growth apparatus which normally has a quartz reaction tube.…”

mentioning

confidence: 99%

“…The source of the silicon can be both the starting materials (especially the indium) and the growth apparatus which normally has a quartz reaction tube. It is possible, however, to reduce the silicon content in the melt by adjusting the water vapor pressure in the growth system and thereby oxidize the silicon to SiO or SiO2 (3)(4)(5).…”

mentioning

confidence: 99%

“…To our knowledge, the work done so far on this problem (both for GaAs, InP, and GaInAsP) (1)(2)(3)(4)(5) has only considered the case where SiO2 is present at the baking temperature. In this case, one finds that at equilibrium, the silicon content in the indium melt is determined by the temperature and the water content of the atmosphere.…”

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confidence: 99%

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Optimum Conditions for Baking of Indium

Janson

1983

J. Electrochem. Soc.

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Calculations of SiO partial pressure over an indium melt with dissolved silicon in a moist hydrogen atmosphere are reported. The results are given as a function of temperature, water vapor pressure, and concentration of silicon in the melt, both with and without SiO~ present. The influence of the total pressure in the baking system is considered, and the calculations indicate that by using a pressure lower than atmospheric, the efficiency of the baking should be significantly increased. The time constant of the baking process is, furthermore, shown to be critically dependent on water vapor partial pressure. These results should be valuable when one wants to find the optimum baking procedure to remove residual silicon from indium.

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Liquid‐Phase Epitaxy

Mauk¹

2023

Digital Encyclopedia of Applied Physics

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Liquid‐phase epitaxy (LPE) is a crystal growth method that produces single‐crystal films or layers of semiconductors and other types of materials on a supporting substrate. LPE‐grown structures include light‐emitting diodes (LEDs), laser diodes, and photodetectors; energy conversion devices such as photovoltaic cells, and various magnetic and optical devices. LPE is typically affected by solidifying a film comprising solute components precipitated from a molten metallic solution at temperatures ranging from several hundred to >1200 °C. A common LPE technology is based on a crucible slider apparatus in a temperature‐programmed furnace with a hydrogen ambient at atmospheric pressure. Multiple layer depositions generate a wide range of structures, and LPE has proven especially useful for III–V compound semiconductor heterostructures. Present‐day uses of LPE stem from favorable features such as fast growth rates, low defect densities, a wide choice of impurity dopants, and straightforward formulations based on phase equilibria and kinetics data and models. While LPE was a prominent epitaxy technology in the 1970s and 1980s, nowadays LPE is relegated to niche applications. Compared to competing epitaxy technologies such as molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), LPE falls short with regard to the achievement of ultrathin layered structures, strained or lattice‐mismatched structures, abrupt interfaces, and areal uniformity. Still, there are significant application areas well served by LPE or by modified LPE techniques, as reviewed here.

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High purity LPE InP

Cited by 31 publications

References 3 publications

A Study of Impurities and Traps in Liquid Phase Epitaxial InP in Relation to Melt Prebaking

A Study of Impurities and Traps in Liquid Phase Epitaxial InP in Relation to Melt Prebaking

Optimum Conditions for Baking of Indium

Liquid‐Phase Epitaxy

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