A quantum‐mechanical model of charge condensation is proposed for non‐conjugated polar elastomers It was found that the stability of the bi‐ and multi‐polaron state may be achieved if the dielectrical permeability of the matrix is high enough. It is shown that the multi‐electron unit, called as superplaron, should have a linear structure and possess ferromagnetic properties. The one‐dimensional character of the conductivity of a superpolaron leads to the formation of electron pairs and to the appearance of high temperature superconductivity of superpolarons. A lot of experimental data confirms the real existance of superconductivity at some polar elastomers at 300 K.

The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow-gap semiconductor surrounded by txvo wide-gap ones in the A1-Ga-P-As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with it composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 17: heterojiinctions with less t,erisions than in the Al-Ga-As system are available. A new method of obtaining A1,Gal-zPUAsl-y solid solutions with the concentration of P proportional to that of A1 has been worked out on the basis of which miiltilayer heterolight-emitting structures have been prepared.Die vorliegeride Arbeit berichtet, uber Ergebnisse einer Untersuchung der Kristallisation von Mehrschichtstrukturon aus eiiiem schmalbandigen, beiderseitig benachbart von einem breitbandigcn Halbleiter des Systems Al-Ga-P-As auf GaAs bzw. Gap-Substraten. Der EinfluB der Gitterparamoterdifferenz auf den Wert der thermischen Spannung in Strukturen mit einem Gradienten der Zusammensetzung wurde anhand der Verbiegung der Schicht nach Ablosung vom Substrat bestimmt. Es wurde naehgewiesen, daB bei P < 1 yo in dcr festen Losung Heterouberglnge mit geringeren Spannungen als im Al-Ga-AsSystem erreichbar sind. A1,Gal -$PuAs~ -2/-Mischkristalle mit P-Konzentrationen proportional den Al-Konzentrationcn konnten erhalten werden.