The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.

Measurement of periodic optical information signals in the background light noise with a photodetector with extended dynamic range is an urgent task of modern electronics and thus has become the aim of this study. To increase the dynamic range of the photodetector, a new version of the automatic gain control (AGC) circuit has been developed, which consists of an AGC controller, an output photodetector amplifier and an AGC detector. The authors measured the dynamic range of the photodetector when receiving optical radiation with a wavelength of 1064 nm in the power range from 2.10–8 to 2.10–5 W at a modulation frequency of 20 kHz with the AGC on. Under these conditions, the dynamic range of the photodetector was found to be up to 67 dB. If the AGC was off, the dynamic range did not exceed 30 dB. Thus, the study made it possible to create a photodetector with an extended dynamic range up to 67 dB based on a new version of the AGC circuit. The design of the photodetector allowed choosing a useful signal of a particular modulation frequency in the frequency range from 3 to 45 kHz and effectively suppresses the frequencies caused by optical interference in the low frequency range from the frequency of the input signal of constant amplitude up to 3 kHz inclusive. This compensates the current up to 15 mA, which is equivalent to the power of light interference of about 15 mW. Further research should address the issues of reliability of the proposed photodetector design and optimization of its optical system. The photodetector can be used in geodesy and ambient air quality monitoring.

The paper shows the results of the development of a photodiode technology based on gallium phosphide structure n+-n-GaP-Au with high sensitivity. It provides the ion etching of the surface of the gallium phosphide before an application of a leading electrode of gold. The barrier layer of a 20 nm thick gold is applied to the substrate in the magnetic field of GaP. When forming the contact with the reverse side of the indium substrate at 600°C, there occurs the annealing of the gold barrier layer. At the maximum of the spectral characteristics obtained by the photodiode, it has a sensitivity of 0.13 A/W, and at a wavelength of 254 nm – about 0.06 A/W. The dynamic range of the photodiode is not less than 107.

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