In the present paper, the theoretical investigation of the device structure ITO/CeO2/SnS/Spiro-OMeTAD/Mo of SnS-based solar cell has been performed. The aim of this work is to examine how the Spiro-OMeTAD HTL affects the performance of SnS-based heterostructure solar cell. Using SCAPS-1D simulation software, various parameters of SnS-based solar cell such as work function, series and shunt resistance and working temperature have been investigated. With the help of Spiro-OMeTAD, the suggested cell’s open-circuit voltage was increased to 344 mV. The use of Spiro-OMeTAD HTL in the SnS-based solar cell resulted in 14% efficiency increase, and the proposed heterojunction solar cell has 25.65% efficiency. The cell’s performance is determined by the carrier density and width of the CeO2 ETL (electron transport layer), SnS absorber layer and Spiro-OMeTAD HTL (hole transport layer). These data reveal that the Spiro-OMeTAD solar cells could have been a good HTL (hole transport layer) in regards to producing SnS-based heterojunction solar cell with high efficiency and reduced cost.

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Cesium tin germanium triiodide (CsSn0.5Ge0.5I3) is one of the proficient inorganic halides the perovskites for better stability that has received wide attention in recent years. In the present study, a lead-free perovskite solar cell structure is designed with Zinc selenide as the electron transport layer (ETL), CsSn0.5Ge0.5I3 as the perovskite absorber layer, and PTAA [Poly(bis[4-phenyl]{2,4,6-trimethylphenyl}amine)] as the hole transport layer (HTL). For a more practical understanding of the solar cell, several parameters such as absorber thickness, defect density, doping concentration of absorber layer, interface defects, and working point temperature have been examined. SCAPS-1D simulator is used for the analysis of the proposed device. The PCE of the device has been obtained as 23.15% with VOC = 1.07 V, JSC = 27.24 mA/cm2, FF = 78.82 % at 800 nm thickness of CsSn0.5Ge0.5I3 absorber layer. Selecting the best material parameters and easy fabrication is suitable for developing highly efficient and environmentally friendly perovskite solar cells.

This paper describes the simulation by Solar Cell Capacitance Simulator-1D (SCAPS-1D) software of ZnO/CdS/SnS/NiO/Au solar cells, in which zinc oxide (ZnO) is used as transparent conductive oxide (TCO) and nickel oxide (NiO) is used as a hole transport layer (HTL). The effects of absorber layer (SnS) thickness, carrier concentration, SnS defect density, NiO HTL, ZnO TCO, electron affinity and work function on cell performance have been evaluated. The effect of interface defect density of SnS/CdS on the performance of the heterojunction solar cell is also analysed. As the results indicate, a maximum power conversion efficiency of 26.92% was obtained.