Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency ("blinking"), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.

Chemical reactions between semiconducting single-wall carbon nanotubes (SWCNTs) and single-stranded DNA (ssDNA) achieve spatially patterned covalent functionalization sites and create coupled fluorescent quantum defects on the nanotube surface, tailoring SWCNT photophysics for applications such as single-photon emitters in quantum information technologies. The evaluation of relaxation dynamics of photoluminescence (PL) from those coupled quantum defects is essential for understanding the nanotube electronic structure and beneficial to the design of quantum light emitters. Here, we measured the PL decay for ssDNA-functionalized SWCNTs as a function of the guanine content of the ssDNA oligo that dictates the red-shifting of their PL emission peaks relative to the band-edge exciton. We then correlate the observed dependence of PL decay dynamics on energy red-shifts to the exciton potential energy landscape, which is modeled using first-principles approaches based upon the morphology of ssDNA-altered SWCNTs obtained by atomic force microscopy (AFM) imaging. Our simulations illustrate that the multiple guanine defects introduced within a single ssDNA strand strongly interact to create a deep exciton trapping well, acting as a single hybrid trap. The emission decay from the distinctive trapping potential landscape is found to be biexponential for ssDNA-modified SWCNTs. We attributed the fast time component of the biexponential PL decay to the redistribution of exciton population among the lowest energy bright states and a manifold of dark states emerging from the coupling of multiple guanine defects. The long lifetime component in the biexponential decay, on the other hand, is attributed to the redistribution of exciton population among different exciton trapping sites that arise from the binding of multiple ssDNA strands along the nanotube axis. AFM measurements indicate that those trapping sites are separated on average by ∼8 nm along the nanotube axis.

The fine structure of exciton states in colloidal quantum dots (QDs) results from the compound effect of anisotropy and electron-hole exchange. By means of single-dot photoluminescence spectroscopy, we show that the emission of photo-excited InP/ZnSe QDs originates from radiative recombination of such fine-structure exciton states. Depending on the excitation power, we identify a bright exciton doublet, a trion singlet and a biexciton doublet line that all show a pronounced polarization. Fluorescence line 1 narrowing spectra of an ensemble of InP/ZnSe QDs in magnetic fields demonstrate that the bright exciton effectively consists of three states. The Zeeman splitting of these states is well described by an isotropic exciton model, where the fine structure is dominated by electron-hole exchange and shape anisotropy only leads to a minor splitting of the F = 1 triplet. We argue that excitons in InP-based QDs are nearly isotropic because the particular ratio of light and heavy hole masses in InP makes the exciton fine structure insensitive to shape anisotropy.

Interlayer excitons (IXs) formed at the interface of two different atomically-thin semiconductors have been emerging as an exciting ground not only for exploring fascinating many-body phenomena such as exciton condensation,1-4 but also for realizing exciton-based information processing technologies.5, 6 In a parallel development, nanoscale strain engineering has emerged as an effective means for the localization of 2D intra-layer excitons and activation of defect states for quantum light generation.7-11 Exploring the intersection of these two exciting areas, where strain and defects are exploited for the manipulation of IX toward the emergence of new functionalities, is currently at a nascent stage.6 Here, using MoS2/WSe2 heterostructure as a model system, we demonstrate how strain, defects, and layering can be utilized as control knobs toward novel defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. More significantly, because the deep-level sulfur vacancy states isolate our quantum emitters (QEs) from any of the intra- and inter-layer excitons, we were able to achieve ultra-high single-photon purity with g(2)(0) = 0.01 meeting the critical milestone for quantum key distribution (QKD), logic gate and memory technologies.12 Our strategy of creating site-controlled QEs from the defect-bound IXs represents a paradigm shift in 2D quantum photonics research, from engineering intralayer exciton in monolayer structures towards IXs at the interface of 2D heterostructures.