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Integrated microbatteries are being currently developed to act as a "micropower" source in microsatellites. The current and voltage rating of the microbattery is fixed. Certain highly miniaturized systems require higher voltages and currents. A switching matrix is designed to achieve the same. The switching matrix is designed using High Voltage Metal Oxide Semiconductor (MOS) structures and bulk isolated H gate transistors.This paper presents a design approach to help attain any random grouping pattern between the microbatteries. In this case, the result is an ability to charge microbatteries in parallel and to discharge microbatteries in parallel or pairs of microbatteries in series. This is achieved by providing the appropriate gate/bulk voltages to the matrix. High Voltage MOS structures are developed which can take higher drain-to-source voltages in a 3.3 V process. The designs are built using Microwave Silicon-on-Insulator process.

Absiracl-A high voltage bandgap reference circuit has been designed and implemented in an SO1 CMOS technology. The design is capable of maintaining a stable value, in the temperature range from 0°C to 100°C. The design is also validated against process and power supply fluctuations. An innovative approach replaces the traditional lateral pnp transistor method.