High voltage bandgap reference design using SOI technology

Abstract

Absiracl-A high voltage bandgap reference circuit has been designed and implemented in an SO1 CMOS technology. The design is capable of maintaining a stable value, in the temperature range from 0°C to 100°C. The design is also validated against process and power supply fluctuations. An innovative approach replaces the traditional lateral pnp transistor method.

An Enhanced Anti-surge Circuit for New Energy Vehicle Electronics System

“…In [9], a two-stage circuit is proposed, where the first stage bandgap regulates the supply voltage to provide a relatively high voltage for the second stage bandgap, ensuring the accuracy of the whole circuit. In [10], substituting the traditional PNP transistors with high-voltage Silicon-on-Insulator MOS allows the circuit to adapt directly to high voltage, with the minimum supply voltage of the circuit still above 10 V. Therefore, this work applies an overvoltage protection module with adjustable overvoltage protection threshold, and a bandgap reference circuit with a low minimum supply voltage that doesn't need pre-regulated processing, ensuring a small chip in a smaller package that can be applied in more fields. Moreover, the traditional design mostly uses Zener Diodes [7] or Diode strings for gate protection, as shown in Figure 1, which is susceptible to process, voltage, and temperature and can only provide passive protection instead of stopping the driver circuit from operating.…”

A high supply voltage bandgap reference circuit using drain-extended MOS devices

“…In [6], a bandgap reference circuit that uses a high-voltage SOI MOS transistors was proposed. The circuit structure was implemented efficiently for wide power-supply voltage ranges without applying a regulator for the bandgap core circuit by using high-voltage SOI nMOS in one of the branch out of four branches.…”