Nitrogen doping opens possibilities for tailoring the electronic properties and band gap of graphene toward its applications, e.g., in spintronics and optoelectronics. One major obstacle is development of magnetically active N-doped graphene with spin-polarized conductive behavior. However, the effect of nitrogen on the magnetic properties of graphene has so far only been addressed theoretically, and triggering of magnetism through N-doping has not yet been proved experimentally, except for systems containing a high amount of oxygen and thus decreased conductivity. Here, we report the first example of ferromagnetic graphene achieved by controlled doping with graphitic, pyridinic, and chemisorbed nitrogen. The magnetic properties were found to depend strongly on both the nitrogen concentration and type of structural N-motifs generated in the host lattice. Graphenes doped below 5 at. % of nitrogen were nonmagnetic; however, once doped at 5.1 at. % of nitrogen, N-doped graphene exhibited transition to a ferromagnetic state at ∼69 K and displayed a saturation magnetization reaching 1.09 emu/g. Theoretical calculations were used to elucidate the effects of individual chemical forms of nitrogen on magnetic properties. Results showed that magnetic effects were triggered by graphitic nitrogen, whereas pyridinic and chemisorbed nitrogen contributed much less to the overall ferromagnetic ground state. Calculations further proved the existence of exchange coupling among the paramagnetic centers mediated by the conduction electrons.
The availability of well-defined modified graphene derivatives such as fluorographene, graphane, thiographene or hydroxygraphene is of pivotal importance for tuning the resulting material properties in numerous potential applications. A series of fluorinated graphene with various contents of fluorine was synthesized by a simple fluorination procedure in an autoclave with a nitrogen/fluorine atmosphere at different exposure times and temperatures. To investigate the composition, structure and properties all samples were characterized in detail by a number of analytical techniques such as SEM, XRD, EDS, AFM, STEM, combustible elemental analysis, STA, XPS, Raman spectroscopy, UV-VIS spectroscopy and cyclic voltammetry. The fully fluorinated graphene with the overall stoichiometry C1F1.05 had a bright white color indicating a significant change of band-gap. In comparison to other samples such a high concentration of fluorine led to the occurrence of exotic thermal behavior, strong luminescence in the visible spectral region and also the unique super-hydrophobic behavior observed on the material surface. The described tunable fluorination should pave the way to fluorographene based devices with tailored properties.
Abstract2D van der Waals (vdW) materials have been considered as potential building blocks for use in fundamental elements of electronic and optoelectronic devices, such as electrodes, channels, and dielectrics, because of their diverse and remarkable electrical properties. Furthermore, two or more building blocks of different electronic types can be stacked vertically to generate vdW heterostructures with desired electrical behaviors. However, such fundamental approaches cannot directly be applied practically because of issues such as precise alignment/positioning and large‐quantity material production. Here, these limitations are overcome and wafer‐scale vdW heterostructures are demonstrated by exploiting the lateral and vertical assembly of solution‐processed 2D vdW materials. The high exfoliation yield of the molecular intercalation‐assisted approach enables the production of micrometer‐sized nanosheets in large quantities and its lateral assembly in a wafer‐scale via vdW interactions. Subsequently, the laterally assembled vdW thin‐films are vertically assembled to demonstrate various electronic device applications, such as transistors and photodetectors. Furthermore, multidimensional vdW heterostructures are demonstrated by integrating 1D carbon nanotubes as a p‐type semiconductor to fabricate p–n diodes and complementary logic gates. Finally, electronic devices are fabricated via inkjet printing as a lithography‐free manner based on the stable nanomaterial dispersions.
Herein, black phosphorus quantum dots and nanoparticles of a few layer thickness were prepared and characterized using STEM, AFM, dynamic light scattering, X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. Impact electrochemistry of the induvidual black phosphorus nanoparticles allows their size determination. The centrifugation of colloidal black phosphorus nanoparticles allowed separation of quantum dots with sizes up to 15 nm. These black phosphorus nanoparticles exhibit a large band gap and are expected to find a wide range of applications from semiconductors to biomolecule tags. The use of black phosphorus nanoparticles for vapour sensing was successfully demonstrated.
Graphene and its derivatives have been reported in many articles as “metal-free” carbon electrocatalytic materials. Its synthesis procedures are generally based on the chemical oxidation of graphite and subsequent thermal or chemical reduction. Because graphene oxide has a large surface area and typically contains a variety of oxygen functionalities, metallic ions (impurities) from reaction mixtures can be adsorbed on its surface. These impurities can significantly enhance the electrocatalytic activity and thus lead to data misinterpretation; such impure samples are referred to as “metal-free” catalysts. In this paper, we report the synthesis of impurity-free graphene, which is compared with graphene prepared by standard methods based on the thermal and chemical reduction of two graphene oxides. Detailed analysis of graphene prepared by standard methods shows a direct relation between metallic impurities and the electrocatalytic activity of graphene. In contrast, impurity-free graphene exhibits poor electrocatalytic activity.
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